Mattson Technology, Inc

Steag Rtp Systems Gmbh

Other

Patrick Schmid

Zsolt Nenyei

Wilfried Lerch

Paul Janis Timans

Daniel J Devine

Yao Zhi Hu

Conor Patrick O'Carroll

Sing-Pin Tay

Dieter Zernickel

Helmut Aschner

Thorsten Hülsmann

Thomas Theiler

Manfred Falter

Jürgen Niess

Uwe Kreiser

Karsten Weber

Jüergen Niess

Eddy Jager

Steffen Frigge

Michael Grandy

Olgun Altug

Rudy Cardema

Waltraud Dietl

Igor Fidelman

The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.

Apparatus for the heat treatment of disc shaped substrates

Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Method and system for thermally processing a plurality of wafer-shaped objects

Disclosed is an apparatus and a method for reducing flash in an injection mold (or) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (orandorand) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure () configured to provide in use, the electrical actuation signal to said active material actuator (orandorand) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Method for the thermal treatment of disk-shaped substrates

The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Device for thermal treatment of substrates

The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element ( ) can be at least partly lowered and/or raised in the reaction chamber.

Method and apparatus device for the heat treatment of substrates

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Donzdorf, Germany

Patrick Schmid