Aselta Nanographics

Commissariat a L'energie Atomique Et Aux Energies Alternatives

France Telecom

Fahrenheit Thermoscope LLC

France T&eacute;l&eacute;com

Patrick Schiavone

Thiago Figueiro

Mohamed Saib

Nader Jedidi

Mohamed Saïb

Frederic Gaillard

Frédéric Gaillard

Maryse Paoli

Sébastien Bayle

Aurélien Fay

Alain Prola

Jean-Herve Tortai

Jean-Hervé Tortai

Fr&eacute;d&eacute;ric Gaillard

Andr&eacute; Schiltz

Thiago Figuerio

A method is provided to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.

Method for determining the dose corrections to be applied to an IC manufacturing process by a matching procedure

A method for projecting an electron beam onto a target includes correction of the scattering effects of the electrons in the target. This correction is made possible by a calculation step of a point spread function having a radial variation according to a piecewise polynomial function.

Method for the correction of electron proximity effects

A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam comprises: a step of producing a dose map, associating a dose to elementary shapes of the pattern; and a step of exposing the substrate according to the pattern with a spatially-dependent emitted dose depending on the dose map; wherein the step of producing a dose map includes: computing at least first and second metrics of the pattern for each of the elementary shapes, the first metric representative of features of the pattern within a first range from the elementary shape and the second metric representative of features of the pattern within a second range, larger than the first range, from the elementary shape; and determining the emitted dose associated to each of the elementary shapes of the pattern as a function of the metrics. A computer program product is provided for carrying out such a method or at least the step of producing a dose map.

Method of performing dose modulation, in particular for electron beam lithography

A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.

Method for calculating the metrics of an IC manufacturing process

An IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or cannot include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments. The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.

Method for determining the parameters of an IC manufacturing process model

A method to easily determine parameters of a second process for manufacturing from parameters of a first process is provided. Metrics representative of differences between the first process and the second process are computed from a number of values of the parameters, which can be measured for the first process and the second process on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the first process and the second process by an interpolation/extrapolation procedure. A set of metrics are selected so that their combination gives a precise representation of the differences between the first process and the second process in all areas of a target design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.

Method for determining the parameters of an IC manufacturing process by a differential procedure

A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopy, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, said point spread function uses Gaussian distribution laws. At least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII functions. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.

Method of correcting electron proximity effects using Voigt type scattering functions

A method for projecting an electron beam, used notably in direct or indirect writing lithography and in electronic microscopy. Proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. For this, the convolution of a point spread function with the geometry of the target is conventionally used. At least one of the components of the point spread function has its maximum value not located on the center of the beam. Preferably, the maximum value is instead located on the backward scattering peak. Advantageously, the point spread function uses gamma distribution laws.

Method for correcting electronic proximity effects using off-center scattering functions

The invention concerns a method for minimizing 'corner' effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under luminous radiation with weak wavelength.

Method for minimizing corner effect by densifying the insulating layer

A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists (DUV photoresists) on each of a series of silicon semiconductor substrates successively introduced into the same reactor chamber includes a step of plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxynitride antireflection film and treatment of the antireflection film with an oxygen plasma. The reactor chamber is cleaned before the successive introduction of each of the substrates by purging the reactor chamber using an oxygen-free gas plasma and then depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.

Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists

A method of correcting topographical effects on a microelectronic substrate, the method comprising the steps consisting in depositing a layer of resin on the structure to be planarized having topography in relief surrounded by isolation zones, and subjecting said resin layer in its zones superposed on underlying zones of high topographical density to photolithography by means of a mask possessing a standard mesh without any one-to-one coincidence with the underlying topography.

Method of correcting topographical effects on a micro-electronic substrate

A process for etching a gate conductor material in the fabrication of MOS transistors is presented. A hard mask layer composed of silicon oxynitride is formed upon a gate conductor layer. The hard mask layer is preferably patterned using a resin layer. The patterned hard mask layer is preferably used to form a patterned gate conductor. The gate conductor is preferably composed of polycrystalline silicon or a silicon-germanium alloy.

Growing community of inventors

Villard-Bonnot, France

Patrick Schiavone