University of California

Euv Llc.

Other

The Regents of California

Patrick P Naulleau

Kenneth Alan Goldberg

Edita Tejnil

Jeffrey Bokor

James H Underwood

Rupert C C Perera

Erik H Anderson

Paul E Denham

Phillip J Batson

Michael S Jones

A wavefront modulating optical element device employs two or more materials lithographically patterned with programmed thickness profiles. The spatially-varying thickness profiles are chosen to yield arbitrary relative phase-shift and attenuation upon transmission. The device can be designed to create arbitrary diffractive optical elements with specific applications including diffusers, arbitrary holographic optical elements, null-elements for wavefront compensation and control in interferometry.

Diffractive optical element for extreme ultraviolet wavefront control

Techniques for rapidly characterizing reflective surfaces and especially multi-layer EUV reflective surfaces of optical components involve illuminating the entire reflective surface instantaneously and detecting the image far field. The technique provides a mapping of points on the reflective surface to corresponding points on a detector, e.g., CCD. This obviates the need to scan a probe over the entire surface of the optical component. The reflective surface can be flat, convex, or concave.

Extended surface parallel coating inspection method

The effective coherence of a synchrotron beam line can be tailored to projection lithography requirements by employing a moving holographic diffuser and a stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (1) a synchrotron source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence, (2) a holographic diffuser having a surface that receives incident radiation from said source, (3) means for translating the surface of the holographic diffuser in two dimensions along a plane that is parallel to the surface of the holographic diffuser wherein the rate of the motion is fast relative to integration time of said image processing system; and (4) a condenser optic that re-images the surface of the holographic diffuser to the entrance plane of said image processing system.

Holographic illuminator for synchrotron-based projection lithography systems

Techniques for fabricating well-controlled, random relief, engineered surfaces that serve as substrates for EUV optical devices are accomplished with grayscale exposure. The method of fabricating a multilevel EUV optical element includes: (a) providing a substrate; (b) depositing a layer of curable material on a surface of the substrate; (c) creating a relief profile in a layer of cured material from the layer of curable material wherein the relief profile comprises multiple levels of cured material that has a defined contour; and (d) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. The curable material can comprise photoresist or a low dielectric constant material.

Method of fabricating reflection-mode EUV diffusers

Techniques for generating partially coherent radiation and particularly for converting effectively coherent radiation from a synchrotron to partially coherent EUV radiation suitable for projection lithography.

Apparatus for generating partially coherent radiation

The effective coherence of an undulator beamline can be tailored to projection lithography requirements by using a simple single moving element and a simple stationary low-cost spherical mirror. The invention is particularly suited for use in an illuminator device for an optical image processing system requiring partially coherent illumination. The illuminator includes: (i) source of coherent or partially coherent radiation which has an intrinsic coherence that is higher than the desired coherence; (ii) a reflective surface that receives incident radiation from said source; (iii) means for moving the reflective surface through a desired range of angles in two dimensions wherein the rate of the motion is fast relative to integration time of said image processing system; and (iv) a condenser optic that re-images the moving reflective surface to the entrance plane of said image processing system, thereby, making the illumination spot in said entrance plane essentially stationary.

A lithographic illuminator to illuminate a reticle to be imaged with a range of angles is provided. The illumination can be employed to generate a pattern in the pupil of the imaging system, where spatial coordinates in the pupil plane correspond to illumination angles in the reticle plane. In particular, a coherent synchrotron beamline is used along with a potentially decoherentizing holographic optical element (HOE), as an experimental EUV illuminator simulation station. The pupil fill is completely defined by a single HOE, thus the system can be easily modified to model a variety of illuminator fill patterns. The HOE can be designed to generate any desired angular spectrum and such a device can serve as the basis for an illuminator simulator.

Synchrotron-based EUV lithography illuminator simulator

A system for inspecting lithography masks utilizing a laser source to produce a coherent electromagnetic radiation pulse. The pulse is passed to a target which creates a plasma resulting in an extreme ultraviolet (EUV) beam. The beam is condensed and passed through an aperture to define a cross-sectional area of the condensed EUV beam on a lithography mask. A transmission zone plate resolves the image reflected from the lithography mask and passes the image to a detector for analysis.

System for inspecting EUV lithography masks

The phase-shifting point diffraction interferometer (PS/PDI) was developed to address the problem of at-wavelength metrology of extreme ultraviolet (EUV) optical systems. Although extremely accurate, the fact that the PS/PDI is limited to use with coherent EUV sources, such as undulator radiation, is a drawback for its widespread use. An alternative to the PS/PDI, with relaxed coherence requirements, is lateral shearing interferometry (LSI). The use of a cross-grating, carrier-frequency configuration to characterize a large-field 4&times;-reduction EUV lithography optic is demonstrated. The results obtained are directly compared with PS/PDI measurements. A defocused implementation of the lateral shearing interferometer in which an image-plane filter allows both phase-shifting and Fourier wavefront recovery. The two wavefront recovery methods can be combined in a dual-domain technique providing suppression of noise added by self-interference of high-frequency components in the test-optic wavefront.

Dual-domain lateral shearing interferometer

A new interferometry configuration combines the strengths of two existing interferometry methods, improving the quality and extending the dynamic range of both. On the same patterned mask, placed near the image-plane of an optical system under test, patterns for phase-shifting point diffraction interferometry and lateral shearing interferometry coexist. The former giving verifiable high accuracy for the measurement of nearly diffraction-limited optical systems. The latter enabling the measurement of optical systems with more than one wave of aberration in the system wavefront. The interferometry configuration is a hybrid shearing and point diffraction interferometer system for testing an optical element that is positioned along an optical path including: a source of electromagnetic energy in the optical path; a first beam splitter that is secured to a device that includes means for maneuvering the first beam splitter in a first position wherein the first beam splitter is in the optical path dividing light from the source into a reference beam and a test beam and in a second position wherein the first beam splitter is outside the optical path: a hybrid mask which includes a first section that defines a test window and at least one reference pinhole and a second section that defines a second beam splitter wherein the hybrid mask is secured to a device that includes means for maneuvering either the first section or the second section into the optical path positioned in an image plane that is created by the optical element, with the proviso that the first section of the hybrid mask is positioned in the optical path when first beam splitter is positioned in the optical path; and a detector positioned after the hybrid mask along the optical path.

Hybrid shearing and phase-shifting point diffraction interferometer

An improved phase-shifting point diffraction interferometer can measure both distortion and wavefront aberration. In the preferred embodiment, the interferometer employs an object-plane pinhole array comprising a plurality of object pinholes located between the test optic and the source of electromagnetic radiation and an image-plane mask array that is positioned in the image plane of the test optic. The image-plane mask array comprises a plurality of test windows and corresponding reference pinholes, wherein the positions of the plurality of pinholes in the object-plane pinhole array register with those of the plurality of test windows in image-plane mask array. Electromagnetic radiation that is directed into a first pinhole of object-plane pinhole array thereby creating a first corresponding test beam image on the image-plane mask array. Where distortion is relatively small, it can be directly measured interferometrically by measuring the separation distance between and the orientation of the test beam and reference-beam pinhole and repeating this process for at least one other pinhole of the plurality of pinholes of the object-plane pinhole array. Where the distortion is relative large, it can be measured by using interferometry to direct the stage motion, of a stage supporting the image-plane mask array, and then use the final stage motion as a measure of the distortion.

System for interferometric distortion measurements that define an optical path

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.

Method of fabricating reflection-mode EUV diffraction elements

A vacuum compatible CCD-based microscopic camera with an integrated illuminator. The camera can provide video or still feed from the microscope contained within a vacuum chamber. Activation of an optional integral illuminator can provide light to illuminate the microscope subject. The microscope camera comprises a housing with a objective port, modified objective, beam-splitter, CCD camera, and LED illuminator.

Miniature self-contained vacuum compatible electronic imaging microscope

Diffraction phase gratings are employed in phase-shifting point diffraction interferometers to improve the interferometric fringe contrast. The diffraction phase grating diffracts a zeroth-order diffraction of light at a first power level to the test-beam window of a mask that is positioned at the image plane and a first-order diffraction at a second power to the reference-beam pinhole. The diffraction phase grating is preferably selected to yield a desired ratio of the first power level to second power level.

Phase-shifting point diffraction interferometer phase grating designs

The extreme ultraviolet (EUV) phase-shifting point diffraction interferometer (PS/PDI) provides the high-accuracy wavefront characterization critical to the development of EUV lithography systems. Enhancing the implementation of the PS/PDI can significantly extend its spatial-frequency measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wavefront and flare. The enhanced technique employs a hybrid spatial/temporal-domain point diffraction interferometer (referred to as the dual-domain PS/PDI) that is capable of suppressing the scattered-reference-light noise that hinders the conventional PS/PDI. Using the dual-domain technique in combination with a flare-measurement-optimized mask and an iterative calculation process for removing flare contribution caused by higher order grating diffraction terms, the enhanced PS/PDI can be used to simultaneously measure both figure and flare in optical systems.

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Oakland, CA, United States of America

Patrick P Naulleau