Philips Lumileds Lighting Company LLC

Lumileds LLC

Koninklijke Philips Corporation N.V.

Lumileds Holding B.v.

Patrick Nolan Grillot

Isaac Wildeson

Rafael Ignacio Aldaz

Tigran Nshanian

Linda T Romano

Nathan Fredrick Gardner

Michael David Camras

Oleg Borisovich Shchekin

Frank Michael Steranka

Werner K Goetz

Parijat Deb

Rafael Ignacio Aldaz Granell

Andrew Kim

Anneli Munkholm

Hanmin Zhao

Michael Ragan Krames

John Edward Epler

Sateria Salim

Eugene I Chen

Deborah L Colbentz

Parijan Pramil Deb

Deborah L Coblentz

Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Light emitting device having an optically pumped semiconductor wavelength converting element

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Reducing or eliminating nanopipe defects in III-nitride structures

Wavelength converted light emitting device including a semiconductor wavelength converting material and a ceramic phosphor

In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

Light emitting device with bonded interface

Embodiments of the invention include a semiconductor light emitting device () capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element () capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element () is attached to a support () and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions () of semiconductor wavelength converting material and at least one second region () without semiconductor wavelength converting material disposed between the at least two first regions.

Wavelength converted light emitting device

In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.

Light emitting device grown on a relaxed layer

An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 &#x3bc;m some embodiments, less than 10 &#x3bc;m in some embodiments. The top side of the semiconductor structure may be textured.

Contact for a semiconductor light emitting device

One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vassociated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.

Semiconductor light emitting device including graded region

In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant acorresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant acorresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(a&#x2212;a)|/a. In some embodiments, the strain in the light emitting layer is less than 1%.

III-nitride light emitting devices grown on templates to reduce strain

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San Jose, CA, United States of America

Patrick Nolan Grillot