Analog Devices International Unlimited Company

Analog Devices,inc.

Analog Devices Global

Analog Devices Global Unlimited Company

Patrick Martin McGuinness

William Allan Lane

Bernard Patrick Stenson

David J Clarke

Alan J O'Donnell

Edward John Coyne

David Aherne

Paul Malachy Daly

Baoxing Chen

Andrew David Bain

Stephen Denis Heffernan

Helen Berney

Laurence Brendan O'Sullivan

Anne Maria Deignan

Javier Alejandro Salcedo

Derek F Bowers

John Anthony Cleary

Michael Thomas Dunbar

Paul Martin Lambkin

Shaun Bradley

Donal McAuliffe

Stephen O'Brien

David M Boland

Albert C O'Grady

Nijun Wei

Jane Cornett

Alfonso Berduque

Raymond J Speer

Shane Patrick Geary

Brendan Cawley

Seamus Paul Whiston

Michael Noel Morrissey

Naiqian Ren

Sombel Diaham

John P Healy

Michael Hennessy

Robert A Bombara

Padraig Fitzgerald

Jan Kubik

Steven J Tanghe

Thomas G O'Dwyer

Brian Anthony Moane

Michael John Flynn

John Twomey

Patrick J Murphy

Fergus John Downey

Catriona Marie O'Sullivan

Eric James Carty

Derek Nolan

Sarah Carroll

Conor John Mcloughlin

Brian Sweeney

Naveen Dhull

Neville Craig

Patrick Elebert

Jagar Singh

William Alan Lane

Steven Tanghe

Erkan Acar

Randy Oltman

Albert C O′Grady

Alan J O′Donnell

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

Wearable device with energy harvesting

An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

Electrochemical sensor, and a method of forming an electrochemical sensor

Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Systems and methods for charge storage and providing power

An apparatus is provided that is implemented to enable multiple tests of different types, such as a direct current (DC) test and/or a radio frequency (RF) test of a semiconductor device. The apparatus includes a microelectromechanical systems (MEMS) switch block coupled between the semiconductor device and automatic testing equipment (ATE). The apparatus is configured to enable/disable a DC path or an RF path to switch between a DC test and an RF test without reconfiguring the connections between the semiconductor device and the ATE. The DC path is used to perform a DC contact test for one or more pins of the semiconductor device. The RF path is used to perform an RF test for the semiconductor device.

Apparatuses and methods for testing semiconductor circuitry using microelectromechanical systems switches

Spark gap structures for detection and protection against electrical overstress events

Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Electric field grading protection design surrounding a galvanic or capacitive isolator

Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.

Micro-scale device with floating conductive layer

Charge storage with electrical overstress protection

Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single monolithic substrate are connect in series to achieve a higher amount of electrical isolation for a single substrate than for one of the isolators alone. A pair of isolators in the back-to-back configuration have top and bottom isolator components where the top isolator components are connected together and electrically isolated from the underlying substrate, resulting in floating top isolator components. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.

Monolithic back-to-back isolation elements with floating top plate

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

Electrical overstress detection device

Storing charge associated with electrical overstress

Growing community of inventors

Pallaskenry, Ireland

Patrick Martin McGuinness