National Research Council of Canada

Other

Groupe Graham International Inc.

Her Majesty the Queen in Right of Canada (...)

E2ip Technologies Inc.

Patrick Malenfant

Chantal Paquet

Zhao Li

Jianfu Ding

Bhavana A Deore

Arnold Kell

Olga Mozenson

Jacques Lefebvre

Sylvie Lafreniere

Benoit Simard

Xiangyang Liu

Naiying Du

Jafar Shaker

Khelifa Hettak

Fuyong Cheng

Reza Chaharmir

Jonathan Ethier

Adrian Momciu

Xiang Yang Liu

Girjesh Dubey

Gregory Lopinski

Julie Ferrigno

Shan Zou

Olivier Ferrand

Sylvie Lafrenière

Jian Xiong Hu

A flake-less molecular ink suitable for printing (e.g. screen printing) conductive traces on a substrate has 30-60 wt % of a C-Csilver carboxylate and 0.1-10 wt % of a polymeric binder, or 5-75 wt % of bis(2-ethyl-1-hexylamine) copper (II) formate, bis(octylamine) copper (II) formate or tris(octylamine) copper (II) formate and 0.25-10 wt % of a polymeric binder, and balance of at least one organic solvent, wherein the binder has ethyl cellulose, and the ethyl cellulose has an average weight molecular weight in a range of 60,000-95,000 g/mol and a bimodal molecular weight distribution.

Molecular inks

A copper-based ink contains copper hydroxide and diethanolamine. The ink may be coated on a substrate and decomposed on the substrate to form a conductive copper coating on the substrate. The ink is low cost and micron-thick traces of the ink may be screen printed and thermally sintered in the presence of up to about 500 ppm of oxygen or photo-sintered in air to produce highly conductive copper features. Sintered copper traces produced from the ink have improved air stability compared to traces produced from other copper inks. Sintered copper traces having sheet resistivity of about 20 m&#x3a9;/&#x25a1;/mil or less may be obtained for 5-20 mil wide screen-printed lines with excellent resolution.

Copper ink

The present invention relates to an electronic device comprising a printed substrate comprising a trace of molecular ink thereon, the molecular ink being sintered to form a conductive metal trace forming the electronic device, wherein the molecular ink is chosen from a) a flake-less printable composition of 30-60 wt % of a C-Csilver carboxylate, 0.1-10 wt % of a polymeric binder and balance of at least one organic solvent, all weights based on total weight of the composition; or b) a flake-less printable composition of 5-75 wt % of bis(2-ethyl-1-hexylamine) copper (II) formate, bis(octylamine) copper (II) formate or tris(octylamine) copper (II) formate, 0.25-10 wt % of a polymeric binder and balance of at least one organic solvent, all weights based on total weight of the composition.

Printed electronics

A single-walled carbon nanotube composition includes single-walled carbon nanotubes substantially enriched in semiconducting single-walled carbon nanotubes in association with a polymer having one or more oligoether side groups. The oligoether side groups render the composition dispersable in polar organic solvents, for example alkyl carbitols, permitting formulation of ink compositions containing single-walled carbon nanotubes substantially enriched in semiconducting single-walled carbon nanotubes. Such ink compositions may be readily printed using common printing methods, such as inkjet, flexography and gravure printing.

Hydrophylic semiconducting single-walled carbon nanotube inks

A flake-less molecular ink suitable for printing (e.g. screen printing) conductive traces on a substrate has 30-60 wt % of a C-Csilver carboxylate or 5-75 wt % of bis(2-ethyl-1-hexylamine) copper (II) formate, bis(octylamine) copper (II) formate or tris(octylamine) copper (II) formate, 0.1-10 wt % of a polymeric binder (e.g. ethyl cellulose) and balance of at least one organic solvent. Conductive traces formed with the molecular ink are thinner, have lower resistivity, have greater adhesion to a substrate than metal flake inks, have better print resolution and are up to 8 times less rough than metal flake inks. In addition, the shear force required to remove light emitting diodes bonded to the traces using Loctite 3880 is at least 1.3 times stronger than for commercially available flake-based inks.

An ink contains an admixture of a copper nanoparticle, a copper precursor molecule (e.g. a copper-aminediol complex), and a polymeric binder, the polymeric binder containing a polyester, polyimide, polyether imide or any mixture thereof having surfacefunctional groups that render the polymeric binder compatible with and/or soluble in a diol. The ink may be deposited on a substrate providing a trace that is conductive and directly solderable and has better mechanical strength than copper inks containing other types of polymeric binders.

Copper ink and conductive solderable copper traces produced therefrom

A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).

Process for purifying semiconducting single-walled carbon nanotubes

A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.

CNT thin film transistor with high K polymeric dielectric

Growing community of inventors

Orleans, CA, United States of America

Patrick Malenfant