Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Stmicroelectronics (grenoble 2) Sas

Patrick LeMaitre

Jean-Francois Carpentier

Jean-Robert Manouvrier

Charles Baudot

Bertrand Borot

Jean-François Carpentier

Mickael Fourel

An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.

Electro-optic device with semiconductor junction area and related methods

An integrated electronic device includes a substrate having an opening extending therethrough. The substrate includes an interconnection network, and connections coupled to the interconnection network. The connections are to be fixed on a printed circuit board. An integrated photonic module is electrically connected to the substrate, with a portion of the integrated photonic module in front of or overlapping the opening of the substrate. An integrated electronic module is electrically connected to the photonic module, and extends at least partly into the opening of the substrate. The electronic module and the substrate may be electrically connected onto the same face of the photonic module.

Three-dimensional integrated photonic structure with improved optical properties

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

Semiconductor device and wafer with reference circuit and related methods

A method is for aligning an electro-optic device. The method may include initially positioning an optical fiber array adjacent to optical grating couplers, and actively aligning the optical fiber array relative to the optical grating couplers in a yaw direction and a roll direction to determine a yaw and roll alignment at a first operating wavelength. The method may include actively aligning the optical fiber array relative to optical grating couplers in an x direction and a y direction to determine a first x and y alignment at the first operating wavelength, determining a second operating wavelength, and actively aligning the optical fiber array again relative to the optical grating couplers in the x direction and y direction to determine a second x and y alignment at the second operating wavelength.

Method for aligning electro-optic device with optical fiber array with optical grating couplers

An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.

Electro-optic (E/O) device with an E/O amplitude modulator and associated methods

An optical waveguide in a semiconductor material, may include, between two adjacent portions of the waveguide, a plurality of parallel strips of alternating conductivity types forming a plurality of opposing bipolar junctions between the two adjacent portions.

Optical waveguide to be carried by a semiconductor material including a plurality of parallel strips of alternating conductivity types and related methods

A method is for testing a photonic integrated circuit (IC) that includes a test structure having a test optical splitter, a test optical input, and first and second test optical outputs. A device under test (DUT) is coupled between the first test optical output and the first output of the test optical splitter. The deembedding structure includes a deembedding optical splitter, a deembedding optical input and first and second deembedding optical outputs. The method includes coupling a test probe device to the test optical inputs and outputs and the deembedding optical inputs and outputs and operating the test probe device to make at least one test measurement related to the DUT and at least one deembedding measurement. The at least one test measurement is processed with the at least one deembedding measurement to determine whether the DUT is acceptable and independent of alignment error.

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Biviers, France

Patrick LeMaitre