International Business Machines Corporation

Patrick Lee Rosno

James David Strom

Eric John Lukes

Timothy Joseph Schmerbeck

Dereje G Yilma

Raymond Alan Richetta

Matthew James Paschal

Nghia Van Phan

Dana Marie Woeste

Steven John Baumgartner

Brent Ray Den Hartog

Katherine Ellen Lobb

A circuit component comprises a row of transistors. The row may contain a first active FET with a source region and a drain region. The row may also contain a first active dummy FET that shares the source region and that also has a diffusion region. The row may also contain a second active FET and a second active dummy FET, positioned such that the active dummy FETs are located between the active FETs on the row. The row may also have an end positioned such that the first active dummy FET is between the end and the first active FET. A supply of current may be electrically connected to the source diffusion regions. A load region may be electrically connected to the drain region. The first active FET and the first active dummy FET may have gates that share a voltage source or that have their own voltage source.

Field effect transistor structure for reducing contact resistance

Certain aspects of the present disclosure are directed to a circuit for driving a signal at an output node. The circuit generally includes a voltage divider network having a first terminal coupled to the output node. The circuit also includes a first transistor having a gate coupled to a second terminal of the voltage divider network and a plurality of transistors. A gate of each of the plurality of transistors may be coupled to a respective tap node of the voltage divider network, and the plurality of transistors may include a third transistor having a source coupled to a drain of the first transistor. The circuit may also include a second transistor coupled to the first transistor and having a gate coupled to an input node of the circuit.

Bidirectional interface using thin oxide devices

A method and circuit are provided for implementing adaptive control for optimization of pulsed resonant drivers, and a design structure on which the subject circuit resides. Peak detectors are used to detect a positive or up level reached by a resonant clock and negative or down level reached by the resonant clock. Each detected levels is compared to a reference level to determine when to vary the turn off timing of a clock driver pull-up device and/or a clock driver pull-down device. A positive peak detector controls the turn off time of the pull-up device and a negative peak detector controls a turn off time of the pull-down device in the pulsed resonant driver.

Implementing adaptive control for optimization of pulsed resonant drivers

A gated differential logic circuit can include a header device having a first terminal coupled to a supply voltage, and a second terminal; a second header device having a third terminal coupled to the supply voltage, and a fourth terminal; a footer device having a fifth terminal coupled to ground, and a sixth terminal; and a second footer device having a seventh terminal coupled to ground, and an eighth terminal. The circuit further includes a driver circuit having a first supply terminal coupled to the second terminal and a first ground terminal coupled to the sixth terminal, and a second driver circuit having a second supply terminal coupled to the fourth terminal and a second ground terminal coupled to the eighth terminal. A capacitor can couple the first supply terminal to the second ground terminal, while a second capacitor may couple the second supply terminal to the first ground terminal.

Gated differential logic circuit

A design structure embodied in a machine readable medium used in a design process includes a current mirror circuit that includes a reference current source that generates a reference current, a reference transistor, a mirror transistor and a ratioed body bias feedback unit. The reference transistor has a first node that is coupled to the output of the reference current source, a gate that is coupled to the first node and a second node coupled to a common voltage. The mirror transistor has a gate coupled to the first node. The ratioed body bias feedback unit generates a body bias voltage coupled to the body of the reference transistor and the body of the mirror transistor. The ratioed body bias feedback unit is configured to adjust the body bias voltage in relationship to the common voltage so that the reference transistor and the mirror transistor each have a threshold voltage within a predefined range.

Ratioed feedback body voltage bias generator

A current mirror circuit includes a reference current source that generates a reference current, a reference transistor, a mirror transistor and a ratioed body bias feedback unit. The reference transistor has a first node that is coupled to the output of the reference current source, a gate that is coupled to the first node and a second node coupled to a common voltage. The mirror transistor has a gate coupled to the first node. The ratioed body bias feedback unit generates a body bias voltage coupled to the body of the reference transistor and the body of the mirror transistor. The ratioed body bias feedback unit is configured to adjust the body bias voltage in relationship to the common voltage so that the reference transistor and the mirror transistor each have a threshold voltage within a predefined range.

A complementary metal oxide semiconductor (CMOS) voltage regulator for low headroom applications includes a differential input common mode range amplifier. The differential input common mode range amplifier is formed by a plurality of CMOS transistors. A source follower CMOS transistor is coupled to an output of the differential input common mode range amplifier for providing an output of the CMOS voltage regulator. A current source is coupled to the differential input common mode range amplifier for maintaining a bias current through the differential input common mode range amplifier.

CMOS regulator for low headroom applications

A method and a reference circuit for bias current switching are provided for implementing an integrated temperature sensor. A first bias current is generated and constantly applied to a thermal sensing diode. A second bias current is provided to the thermal sensing diode by selectively switching a multiplied current from a current multiplier to the thermal sensing diode or to a load diode. The reference circuit includes a reference current source coupled to current mirror. The current mirror provides a first bias current to a thermal sensing diode. The current mirror is coupled to a current multiplier that provides a multiplied current. A second bias current to the thermal sensing diode includes the first bias current and the multiplied current from the current multiplier. The second bias current to the thermal sensing diode is provided by selectively switching the multiplied current between the thermal sensing diode and a dummy load diode.

Method and reference circuit for bias current switching for implementing an integrated temperature sensor

A method and a low voltage, complementary metal oxide semiconductor (CMOS) circuit are provided for generating voltage and current references with a low voltage power supply. A voltage generating circuit provides a voltage reference and is formed by a plurality of CMOS transistors and a resistor. An operational amplifier includes a differential pair of CMOS transistors. The first voltage reference is applied to an input of the differential pair of transistors and an output of the differential pair of transistors providing a second voltage reference. The operational amplifier includes a plurality of current reference transistors. A first voltage generating circuit generates a first voltage and a second voltage generating circuit generating a second voltage. The first and second voltage generating circuits are formed by a plurality of CMOS transistors. The generated first and second voltages are applied to the voltage reference generating circuit and current reference transistors.

Method and low voltage CMOS circuit for generating voltage and current references

A receiver is provided with delay generally insensitive to input amplitude and slew rate. The receiver includes a first differential transistor pair having a common emitter connection. A differential input is applied to a respective base of the differential transistor pair. A pair of load transistors is connected to the respective collector of the differential transistor pair. A respective resistance is coupled to a base of the load transistors for providing a delay independent of the differential input; and a pair of bias transistors is coupled to the respective collector of the differential transistor pair for biasing the load transistors.

Receiver with delay insensitive to input amplitude and slew rate

Circuitry is disclosed for detection of open inputs on an enhanced differential receiver. A pulldown terminator is coupled to the inputs of the enhanced differential receiver. If the differential inputs are not actively driven, the voltage on both differential inputs will be pulled to a predetermined voltage. When the voltage on the differential inputs reach a reference voltage, an active device detects that the reference voltage has been reached, and produces a predetermined logic value on an output of the enhanced differential receiver. The enhanced differential receiver is not subject to oscillation when not actively driven. Delay through the enhanced differential receiver is not substantially greater than delay through a conventional differential receiver consisting of only a differential amplifier.

Open input sense for differential receiver

An apparatus for biasing a body voltage of a silicon-on-insulator transistor includes an operational amplifier that generates an output voltage that is proportional to the voltage difference between a desired gate-source threshold voltage and a reference voltage. A reference biasing transistor has a gate that is electrically coupled to the output. A reference mirror transistor has both a gate and a drain that are electrically coupled to the current source node, and also has a body that is electrically coupled to the drain of the reference biasing transistor. A device biasing transistor has a gate that is electrically coupled to the output voltage and has a drain that is electrically coupled to the body of the silicon-on-insulator transistor. The device biasing transistor maintains a voltage at the body of the silicon-on-insulator transistor so that it has a gate-source threshold voltage within a predetermined range of the desired gate-source threshold voltage.

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Rochester, MN, United States of America

Patrick Lee Rosno