Skyworks Solutions, Inc.

Patrick Lawrence Welch

Yifan Guo

Sandra Louise Petty-Weeks

David Steven Ripley

Philip John Lehtola

Weimin Sun

Hong Shen

Anthony James Lobianco

Peter J Zampardi

Hoang Mong Nguyen

Howard E Chen

Dinhphuoc Vu Hoang

Guohao Zhang

Matthew Sean Read

Hardik Bhupendra Modi

Hongxiao Shao

Hsiang-Chih Sun

Jens Albrecht Riege

Matthew Ozalas

Tin Myint Ko

Mehran Janani

Matthew Thomas Ozalas

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3&#xd7;10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Power amplifier modules including related systems, devices, and methods

An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices.

Semiconductor package with integrated interference shielding and method of manufacture thereof

In one exemplary embodiment, a structure comprises a substrate having a top surface, and a die attach pad situated on the top surface of the substrate. The die attach pad includes a die attach region and at least one substrate ground pad region electrically connected to the die attach region. The die attach pad further includes a die attach stop between the die attach region and the at least one substrate ground pad region. The die attach stop acts to control and limit die attach adhesive flow out to the at least one substrate ground pad region during packaging so that the at least one substrate ground pad region can be moved closer to die attach region so that shorter bond wires for connecting the at least one substrate ground pad region to a die wire bond pad may be used during packaging.

Semiconductor die package with reduced inductance and reduced die attach flow out

Growing community of inventors

Laguna Niguel, CA, United States of America

Patrick Lawrence Welch