USA As Represented by Secretary of the Navy

Patrick L Cole

Adam Duncan

Jeffrey L Titus

Mark Savage

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

Combination metal oxide semi-conductor field effect transistor (MOSFET) and junction field effect transistor (JFET) operable for modulating current voltage response or mitigating electromagnetic or radiation interference effects by altering current flow through the MOSFETs semi-conductive channel region (SCR)

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using structures configured to cooperatively control a common semi-conductive channel region (SCR). One embodiment includes providing a metal oxide semiconductor field effect transistor (MOSFET) section formed with an exemplary SCR and two junction field effect transistor (JFET) gates on opposing sides of the MOSFET's SCR such that operation of the JFET modulates or controls current through the MOSFET's. With two JFET gate terminals to modulate various embodiments' signal(s), an improved mixer, demodulator, and gain control element in, e.g., analog circuits can be realized. Additionally, a direct current (DC)-biased terminal of one embodiment decreases cross-talk with other devices. A lens structure can also be incorporated into MOSFET structures to further adjust operation of the MOSFET. An embodiment can also include a current leakage mitigation structure configured to reduce or eliminate current leakage between MOSFET and JFET structures.

Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods

A computer implemented system for processing selected data from a raw data file having a plurality of data sets arranged according to a repeating fixed format includes a plurality of processing sequences. A first sequence creates output files, each corresponding to a data set and having a common format, by sequentially processing the data sets according to a first meta-program. A second sequence generates a first data structure by processing each output file according to a second meta-program, the first data structure including data arrangements corresponding to the output files. A third sequence generates a second data structure by processing the first data structure according to a third meta-program, the second data structure including a tabular arrangement of data including data from each data arrangement. A fourth sequence processes the second data structure and provides an output configured to facilitate analysis of the data.

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Bedford, IN, United States of America

Patrick L Cole