Arkema Inc.

Atofina Chemicals, Inc.

Patrick Kendall Janney

Nicholas Michael Martyak

Michael D Gernon

Martin Nosowitz

Robert George Syvret

Sri Ram Seshadri

Gary S Smith

Glenn Carroll

Jean-Marie Ollivier

Jean W Chevalier

A fluorination catalyst such as a chromium oxide-based fluorination catalyst may be activated or reactivated by contacting the catalyst. with a source of reactive fluorine, for example nitrogen trifluoride (NF3) or fluorine (F2). Fluorinated compounds may be prepared by the gas phase reaction of hydrogen fluoride (HF) with various substrates such as chlorinated compounds. A number of metal oxide-based catalysts have been developed for this purpose.

Activation and regeneration of fluorination catalysts, and fluorination process

Disclosed is a solution for an electrochemical process, the solution containing a sulfonic acid and having a low concentration of sulfur compounds, either low or high valence, that are susceptible to reduction and which is intended for use in electrodeposition, batteries, conductive polymers and descaling processes.

High purity electrolytic sulfonic acid solutions

A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Composition and method for copper chemical mechanical planarization

Disclosed is an improved electrolyte formulation for the electrodeposition of copper onto electronic devices substrates and a process using the formulation. The formulation is a solution which contains copper alkanesulfonate salts and free alkanesulfonic acids and which is intended for the metallization of micron or sub-micron dimensioned trenches or vias.

Electroplating of copper from alkanesulfonate electrolytes

Formulations and procedures for the deposition of precious metals onto solid substrates are disclosed wherein the formulations are iodide-free and contain an organosulfur compound and/or a carboxylic acid and a source of soluble precious metal ion which is one or more precious metal alkanesulfonates, precious metal alkanesulfonamides and/or precious metal alkanesulfonimides. The formulations and processes may be cyanide-free, and the deposition may be effected by electrolytic, electroless and/or immersion plating techniques.

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Ridley Park, PA, United States of America

Patrick Kendall Janney