Ovonyx Inc.

Intel Corporation

Energy Conversion Devices, Inc.

Ovshinsky Innovation LLC

Patrick K Klersy

Tyler A Lowrey

Stanford R Ovshinsky

Stephen J Hudgens

Boil Pashmakov

David A Strand

Wolodymyr Czubatyj

Sergey A Kostylev

Jon Maimon

Chien Chiang

Jong-Won Sean Lee

Guy Charles Wicker

Wolodymyr Czubatyi

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

Plasma deposition of amorphous semiconductors at microwave frequencies

A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material.

Programmable resistance memory element

Programmable resistance memory element and method for making same

A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.

Memory element with improved contacts

A programmable resistance memory element including a memory material which is raised above a semiconductor substrate by a dielectric layer.

Electrically programmable memory element

A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the conductive layer may be cup-shaped. In one embodiment, the memory element may include a chalcogenide material.

Electrically programmable memory element with reduced area of contact

An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.

Electrically programmable memory element with improved contacts

A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Multiple layer phase-change memory

A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.

An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.

Electrically programmable memory element with reduced area of contact and method for making same

A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.

Method for making programmable resistance memory element

A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.

Programmable resistance memory element with layered memory material

A programmable resistance memory element including a pore of memory material which is raised above a semiconductor substrate by a dielectric layer. The pore may be formed with the use of sidewall spacers.

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Lake Orion, MI, United States of America

Patrick K Klersy