Bell Telephone Laboratories

At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Patrick K Gallagher

Murray Robbins

Roland A Levy

Edwin Arthur Chandross

David W Johnson, Jr

Ernst M Gyorgy

Martin L Green

Gerald Smolinsky

Robert E Dean

Frank Schrey

A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.

Method for fabricating devices and devices formed thereby

Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

Low temperature deposition of silicon oxides for device fabrication

A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

Preparation of III-V materials by reduction

Desirable properties of manganese zinc ferrites are obtained without the need for controlling or changing the oxygen partial pressure during the sintering and cooling steps by adding a small amount of germanium or gallium to the ferrite and using an atmosphere, such as air, during the sintering and cooling steps, that has at least 1 percent oxygen by volume.

Method of making MnZn ferrites

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Basking Ridge, NJ, United States of America

Patrick K Gallagher