Other

Mentor Graphics Corporation

Patrick Joseph LaCour

Nicolas Bailey Cobb

James C Word

Franklin Mark Schellenberg

Emile Y Sahouria

Siqiong You

A method of performing a resolution enhancement technique such as OPC on an initial layout description involves fragmenting a polygon that represents a feature to be created into a number of edge fragments. One or more of the edge fragments is assigned an initial simulation site at which the image intensity is calculated. Upon calculation of the image intensity, the position and/or number of initial simulation sites is varied. New calculations are made of the image intensity with the revised placement or number of simulation sites in order to calculate an OPC correction for the edge fragment. In other embodiments, fragmentation of a polygon is adjusted based on the image intensities calculated at the simulation sites. In one embodiment, the image intensity gradient vector calculated at the initial simulation sites is used to adjust the simulation sites and/or fragmentation of the polygon.

Fragmentation point and simulation site adjustment for resolution enhancement techniques

An embodiment of the present invention described and shown in the specification is a system for optimizing data used in creating a photolithographic mask. The system reads a definition of a layer of wafer to be created with a photolithographic mask and defines a number of polygons corresponding to conventional patterns on a mask and polygons corresponding to areas on the mask that are phase shifters. A number of data layers are created and the polygons that define phase shifting areas that shift the phase of light by differing amounts of are grouped in different data layers. Once separated, the system analyzes the polygons in each data layer against one or more design rules and assigns a phase shift amount to all the polygons in a data layer in accordance with the analysis. The polygon definitions in each data layer are then given to a mask maker to fabricate a photolithographic mask. It is emphasized that this abstract is being provided to comply with the rules requiring an abstract and will not be used to interpret or limit the scope or meaning of the claims under 37 C.F.R. &#xa7; 1.72(b).

Creating photolithographic masks

A method of translating device layout data to a format for a mask writing tool includes the acts of reading a file defining a number of cells that represent structures on the device. One or more cells are selected and one or more modified cells based on the interaction of the selected cells with other cells in the device layout are created. One or more additional cells is created that will create structures on the mask that are not formed by writing files corresponding to the modified cells and areas that prevent extraneous structures from being formed on the mask at a selected location by the writing of the files corresponding to the modified cells. A jobdeck for the mask writing tool is created that indicates where the files corresponding to modified cells and the one or more additional cells should be written to create one or more masks or reticles.

Data management method for mask writing

The present invention comprises a method and apparatus for classifying edges for implementing mask corrections. In one embodiment, classifications are based upon proximity ranges bounded on one side only. Before classifying an edge in a first class based on a first proximity range, it is verified that the classification will produce a correction satisfying a minimum manufacturable length. If the prescribed correction for the first class does produce a correction satisfying the minimum manufacturable length, the edge is classified in a second class corresponding to a second proximity range to produce, in combination with an adjacent edge also in the second class, manufacturable correction. The number of mask corrections implemented in a mask design is thus increased while ensuring that all mask corrections meet guidelines for manufacturability and reducing required clean-up of nonmanufacturable corrections in the design.

Space classification for resolution enhancement techniques

An embodiment of the present invention described and shown in the specification is a system for optimizing data used in creating a photolithographic mask. The system reads a definition of a layer of wafer to be created with a photolithographic mask and defines a number of polygons corresponding to conventional patterns on a mask and polygons corresponding to areas on the mask that are phase shifters. A number of data layers are created and the polygons that define phase shifting areas that shift the phase of light by differing amounts of are grouped in different data layers. Once separated, the system analyzes the polygons in each data layer against one or more design rules and assigns a phase shift amount to all the polygons in a data layer in accordance with the analysis. The polygon definitions in each data layer are then given to a mask maker to fabricate a photolithographic mask. It is emphasized that this abstract is being provided to comply with the rules requiring an abstract and will not be used to interpret or limit the scope or meaning of the claims under 37 C.F.R. &sect;1.72(b).

Method and apparatus for creating photolithographic masks

The present invention comprises a method and apparatus for prioritizing the implementation of resolution-enhancing mask corrections such as scattering bars on lithography tools. Prioritizing conflicting resolution-enhancing mask corrections produces a lithography tool having improved fidelity because corrections that provide the most beneficial effects can be implemented at the expense of corrections that provide less benefit. In a preferred embodiment, the prioritization is based on the geometry of the conflicting correction. For example, assist features that are closer to their respective generating edge may be assigned higher priorities, and assist features generated from orthogonal edges may be assigned higher priorities than features generated from angled edges.

Prioritizing the application of resolution enhancement techniques

The present invention comprises a method and apparatus for classifying edges for implementing mask corrections. In one embodiment, classifications are based upon proximity ranges bounded on one side only. Before classifying an edge in a first class based on a first proximity range, it is verified that the classification will produce a correction satisfying a minimum manufacturable length. If the prescribed correction for the first class does produce a correction satisfying the minimum manufacturable length, the edge is classified in a second class corresponding to a second proximity range to produce, in combination with an adjacent edge also in the second class, a manufacturable correction. The number of mask corrections implemented in a mask design is thus increased while ensuring that all mask corrections meet guidelines for manufacturability and reducing required clean-up of nonmanufacturable corrections in the design.

Growing community of inventors

McKinney, TX, United States of America

Patrick Joseph LaCour