University of Oklahoma

Phononic Devices, Inc.

Mccann Associates, Inc.

Patrick John McCann

Robert Joseph Therrien

Allen Gray

Xiao-Ming Fang

Tathagata Chatterjee

Novel materials, material deposition methods, and devices used to generate electrical power from thermal radiators based on thermophotovoltatic (TPV) operating principles using group IV-VI alloys and materials are disclosed. A semiconductor structure comprising (N) stacked junctions, each junction formed of a IV-VI semiconductor alloy and each of said N junctions having a bandgap, where N is an integer and N&#x3e;1 is disclosed. The semiconductor structure is configured to capture electromagnetic radiation having wavelengths from about 1 &#x3bc;m to about 7 &#x3bc;m. TPV devices comprising the novel semiconductor structure and methods of making the novel structures and devices are also disclosed.

Thermophotovoltaic materials, methods of deposition, and devices

Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker.

Method and apparatus for detecting an analyte

A high power electronic device package constructed to include a high power electronic device having an epitaxial surface attached to a thermally conductive submount by a thermally conductive interface layer having a eutectic metal contact therein. A gallium nitride high electron mobility transistor (GaN HEMT) having a transistor structure formed of a GaN thin film layer bonded to a thermally conductive host substrate via a thermally conductive interface layer disposed therebetween, and a method of forming the GaN HEMT. The GaN HEMTs can be used in such applications as, for example, power amplifiers with x-band radio frequency (RF) power outputs for micro-radar applications.

High-power electronic device packages and methods

A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

Thermoelectric materials

Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.

Thin-film heterostructure thermoelectrics in a group IIa and IV-VI materials system

Thin-film heterostructure thermoelectrics in a group IIA and IV-VI materials system

Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the thermoelectric material, a figure-of-merit (ZT) of the thermoelectric material is improved. In one embodiment, the thermoelectric material includes multiple superlattice periods that block, or reflect, multiple phonon wavelengths.

Low thermal conductivity material

Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on a substrate. The one or more metallization layers and the N-type thin film thermoelectric material layer are etched to form a number of N-type thermoelectric material legs. A first electrode assembly is then bonded to a first portion of the N-type thermoelectric material legs, and the first electrode assembly including the first portion of the N-type thermoelectric material legs is removed from the substrate. In a similar manner, a second electrode assembly is bonded to a first portion of a number of P-type thermoelectric material legs. The first and second electrode assemblies are then bonded using a flip-chip bonding process to complete the fabrication of the thermoelectric module.

Method for thin film thermoelectric module fabrication

A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5&#xb0; C. to about 55&#xb0; C. and pumping the MQW structures with a shorter wavelength laser pump beam or with an electrical current is provided.

Method for generating mid-infrared light

A light-emitting, specifically electroluminescent, europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt % and a molecular beam epitaxy method for growth thereof are provided. Also provided is a light-emitting, specifically electroluminescent, device including a europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt %. The Group IIA fluoride layer exhibits electroluminescence in the wavelength range of from about 450 to about 700 nm.

Europium-containing group IIA fluoride epitaxial layer on silicon

A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.

Growing community of inventors

Norman, OK, United States of America

Patrick John McCann