Murata Manufacturing Co., Ltd.

Resonant, Inc.

Other

Superconductor Technologies Inc.

Resonanat Inc.

Patrick J Turner

Ventsislav Yantchev

Robert B Hammond

Viktor Plesski

Neal O Fenzi

Bryant Garcia

Soumya Yandrapalli

Julius Koskela

Andrew Kay

Jesson John

Kurt F Raihn

Mike Eddy

Richard N Silver

Balam Quitze Andres Willemsen Cortes

Charles Chung

Ryo Wakabayashi

Sean McHugh

Greg Dyer

Andrew C Guyette

Albert Cardona

Douglas Jachowski

Dylan J Kelly

Carolyn Bianco

Webb T Nelson

John Pandelis Koulakis

Doug Jachowski

Sho Nagatomo

James R Costa

Minefumi Ouchi

Chris O'Brien

Brian H Moeckly

Garrett Williams

Gregory L Hey-Shipton

Wei Yang

Luke Myers

Jeong-Uk Huh

Viktor Gliantsev

Filip L Iliev

Filip Iliev

Marie Chantal Mukandatimana

Christopher Yung

Kuan Zhang

Russ Reisner

Chris O′Brien

Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. A thickness between the front and back surfaces is greater than or equal to 200 nm and less than or equal to 1000 nm.

Transversely-excited film bulk acoustic resonator with optimized piezoelectric plate thickness and electrode mark and pitch

An apparatus for filtering radio frequency signals is provided. The apparatus includes a substrate and a membrane coupled to the substrate that includes piezoelectric material. The apparatus also includes an interdigital transducer (IDT) coupled to the membrane and includes a plurality of interleaved fingers. The apparatus also includes a lid, in which the membrane is arranged between the substrate and the lid with a first cavity having a first height between the lid and a first main surface of the membrane and a second cavity having a second height between the substrate and a second main surface of the membrane that opposes the first main surface. Moreover, the first height between the lid and the first main surface of the membrane is greater than a pitch of at least one pair of interleaved fingers of the plurality of interleaved fingers and at most four times greater than the second height.

Acoustic resonator lid for thermal transport

Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.

Filter device

An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate bonded to the substrate surface. A portion of the piezoelectric plate forms a diaphragm that spans a cavity. A conductor pattern including an interdigital transducer (IDT) formed on a surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. A dielectric cover is disposed over the IDT and the plate, and the dielectric cover forms an air gap above the IDT and the plate.

Transversely-excited film bulk acoustic resonators wafer-level packaging using a dielectric cover

An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts/tp≤ts/tpis satisfied, where tp, tp, ts, and tsare respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

Acoustic wave device

Acoustic resonators, acoustic filter devices and methods of making the same. An acoustic resonator device includes a piezoelectric layer having front and back surfaces, a high acoustic velocity layer on the back surface, and an interdigital transducer (IDT) on the front surface. The high acoustic velocity layer has a higher acoustic velocity than an acoustic velocity of the piezoelectric layer.

Acoustic resonators with high acoustic velocity layers

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.

Transversely-excited film bulk acoustic resonators

Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a piezoelectric plate having opposed front and back surfaces. A first electrode and a second electrode are formed on the front surface of the piezoelectric plate, the first and second electrodes and the piezoelectric plate configured such that a radio frequency signal applied between the first and second electrodes excites a shear primary acoustic mode in the piezoelectric plate. The first electrode and the second electrode have trapezoidal cross-sectional shapes. A sidewall angle of at least one side surface of the first electrode and a sidewall angle of at least one side surface of the second electrode are greater than or equal to 70 degrees and less than or equal to 110 degrees.

Transversely-excited film bulk acoustic resonator with controlled conductor sidewall angles

Resonator devices are disclosed. An acoustic resonator device includes a piezoelectric plate having front and back surfaces, an acoustic Bragg reflector on the back surface, and an interdigital transducer (IDT) on the front surface. The acoustic Bragg reflector reflects a primary shear acoustic mode excited by the IDT in the piezoelectric plate over a frequency range including a resonance frequency and an anti-resonance frequency of the acoustic resonator device.

Solidly-mounted transversely-excited film bulk acoustic resonator

Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers.

XBAR resonators with non-rectangular diaphragms

Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness.

Multi-port filter using transversely-excited film bulk acoustic resonators

A filter includes first and second shunt resonators, at least one series resonator connected to the first and second shunt resonators in a ladder filter circuit, and a first ground contact pad. The first shunt resonator has two or more first sub-resonators and the second shunt resonator has two or more second sub-resonators. At least one first sub-resonator and at least one, but less than all, of the two or more second sub-resonators are connected to the first ground contact pad.

Filter using transversely-excited film bulk acoustic resonators with inductively coupled sub-resonators

An acoustic resonator device, filter devices, and methods of making the same. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, where the back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. The device further includes an interdigital transducer formed on the front surface of the piezoelectric plate, where interleaved fingers of the IDT disposed on the diaphragm are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers include a first layer adjacent the diaphragm and a second layer over the first layer, the second layer having a narrower width than the first layer.

Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer

Filters and methods of making filters are disclosed. A filter device includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between a surface of the substrate and a back surface of the piezoelectric plate. A first portion of the piezoelectric plate has a first thickness, and a second portion of the piezoelectric plate has a second thickness less than the first thickness. A conductor pattern on front surfaces of the first and second portions of the piezoelectric plate includes a first interdigital transducer (IDT) with interleaved fingers on the first portion, and a second IDT with interleaved fingers on the second portion.

Solidly-mounted transversely-excited film bulk acoustic filters with multiple piezoelectric plate thicknesses

Acoustic resonator devices and acoustic filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern comprising an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch

Growing community of inventors

Santa Barbara, CA, United States of America

Patrick J Turner