US Government As Represented by the Secretary of the Army

Patrick J Taylor

Sudhir B Trivedi

Jay R Maddux

Wendy L Sarney

Ivan C Lee

Harry Stephen Hier

Adam A Wilson

Sina Simingalam

Zun Zhang

Priyalal S Wijewarnasuriya

Kimberly A Olver

Mark Dubinsky

George J De Coster

A topological material includes a lattice crystalline structure; and a material defect in the lattice crystalline structure that is treatable by hydrogen passivation that chemically mitigates an electronic charge associated with the material defect. The lattice crystalline structure includes dangling bonds in an atomic arrangement of the material defect of the lattice crystalline structure, and the hydrogen passivation may apply hydrogen to chemically passivate the dangling bonds of the material defect. The hydrogen passivation may be achieved by diffusing hydrogen into common materials of the lattice crystalline structure. The hydrogen passivation may chemically and/or electrostatically neutralize an electronic activity associated with the material defect.

Hydrogen-passivated topological materials, devices, and methods

Protective coating to prevent sublimation are disclosed. More particularly, the protective coatings comprise one or more alkaline earth halide materials, or mixtures thereof, to prevent sublimation. The alkaline earth halide material of the coating can be judiciously selected to match the coefficient of thermal expansion (CTE) of the material of the external surface of the underlying substrate coated. The protective coatings may be advantageous for protecting external surfaces of thermoelectric materials, parts and devices at high temperature to prevent sublimation and material loss.

Sublimation protection coating for thermoelectric materials and devices

Method and system for wavelength thermophotovoltaic (WTPV) power generation. In one embodiment, the system comprises a refractory waveguide that collects broadband infrared light generated by a heat source; a filter that filters the collected broadband infrared light to generate narrow-band infrared light; and a thermophotovoltaic (TPV) converter, thermally de-coupled from the heat source, that receives the narrow-band infrared light and converts the received narrow-band infrared light to electrical power.

Method and system for waveguide thermophotovoltaic power generation

Provided among other things is an electrical device comprising: a first component that is a semiconductor or an electrical conductor; a second component that is an electrical conductor; and a strong, heat stable junction there between including an intermetallic bond formed of: substantially (a) tin (Sn) or a mixture of Sn and indium (In) thereof, and (b) substantially nickel (Ni). The junction can have an electrical contact resistance that is small compared to the resistance of the electrical device.

Strong, heat stable junction

A passive thermal oscillator combines a thermoelectric device and a passive analog electrical circuit to produce a time-oscillating temperature difference. The oscillator makes use of a temperature difference imposed across a thermoelectric device to produce a Seebeck voltage to periodically trigger electrical current to pass through a switch. The periodic electrical current causes periodic Peltier cooling producing a time-oscillating temperature difference across the thermoelectric device. There is no requirement for additional external energy input because the thermal energy generates a voltage that is used as the driving force. The operation is purely passive. So long as there is a temperature difference across the thermoelectric device, then the passive thermal oscillator oscillates. The passive thermal oscillator can integrate multiple energy conversion device technologies to operate cooperatively. The cooperation of multiple energy conversion technologies yields a much higher overall system efficiency than just the conversion of thermal energy into electrical energy.

Passive thermal oscillators

Provided among other things is an electrical device comprising: a first component that is a semiconductor or an electrical conductor; a second component that is an electrical conductor; and a strong, heat stable junction there between including an intermetallic bond formed of: substantially (a) indium (In), tin (Sn) or a mixture thereof, and (b) substantially nickel (Ni). The junction can have an electrical contact resistance that is small compared to the resistance of the electrical device.

Growing community of inventors

Vienna, VA, United States of America

Patrick J Taylor