Tokyo Electron Limited

Patrick Hughes

Mihaela Ioana Popovici

Lars-Ake Ragnarsson

Ian Colgan

Ioan Domsa

David Hurley

Barry Clarke

Gerhardus Van Der Linde

Maciej Burel

Robert Daniel Clark

Gerrit J Leusink

Dina Triyoso

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Semiconductor processing systems with in-situ electrical bias

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor processing system with in-situ electrical bias and methods thereof

Growing community of inventors

Dublin, Ireland

Patrick Hughes