Stmicroelectronics(tours) Sas

Patrick Hauttecoeur

Vincent Caro

Pierre Bouillon

Laurent Barreau

Benoit Riou

The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

Manufacturing method of RF components

A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.

Thyristor, triac and transient-voltage-suppression diode manufacturing

A method for encapsulating a thin-film lithium-ion type battery, including the steps of: forming, on a substrate, an active stack having as a lower layer a cathode collector layer extending over a surface area larger than the surface area of the other layers; forming, over the structure, a passivation layer including through openings at locations intended to receive anode collector and cathode collector contacts; forming first and second separate portions of an under-bump metallization, the first portions being located on the walls and the bottom of the openings, the second portions covering the passivation layer; and forming an encapsulation layer over the entire structure.

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Cerelles, France

Patrick Hauttecoeur