Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics S.a.

Stmicroelectronics (Crolles 2) Sas

Patrick Gros D'aillon

Michel Marty

Jean-Pierre Oddou

Stephane Allegret-Maret

Jean-Pierre Carrere

A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6&#xd7;10bonds per cubic centimeter (or even smaller than 0.5&#xd7;10bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.

Process for forming a stack of different materials, and device comprising this stack

An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Back side illumination image sensor with low dark current

Growing community of inventors

Biviers, France

Patrick Gros D'aillon