Flir Systems, Incorporated

Patrick Franklin

Eric A Kurth

Robert F Cannata

Richard E Bornfreund

James L Dale

Tommy Marx

Kevin Peters

John J Naughton

Robert Simes

David Howard

Yaroslava Petraitis

Michael Debar

Jefferson Rose

Chris Chan

Michael DeBar

Craig Shott

Reza Salafian

Saumya Kothari

A device is disclosed including a substrate and a floating blinded infrared detector and/or a shunted blinded infrared detector. The floating blinded infrared detector may include an infrared detector coupled to and thermally isolated from the substrate; and a blocking structure disposed above the infrared detector to block external thermal radiation from being received by the infrared detector; and wherein the blocking structure comprises a plurality of openings. The shunted blinded infrared detector may include an additional infrared detector coupled to the substrate; an additional blocking structure disposed above the infrared detector to block external thermal radiation from being received by the additional infrared detector; and a material that thermally couples the additional infrared detector to the substrate and the additional blocking structure. Methods for using and forming the device are also disclosed.

Devices and methods for infrared reference pixels

Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a plurality of metal studs each having a first end and a second end and each disposed between the first metal layer and a second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate.

Microbolometer contact systems and methods

Systems and methods may be provided for forming enhanced infrared absorption microbolometers. An enhanced infrared absorption microbolometer may include a metal cap formed from a thin layer of oxidizing metal such as titanium and/or a titanium oxide. The metal cap may be formed within a bridge portion of the microbolometer. The bridge portion may include other layers such as first and second absorber layers disposed on opposing sides of a layer of temperature sensitive resistive material. The layer of temperature sensitive resistive material may be located between the metal cap and a reflecting metal layer formed on a readout integrated circuit for the microbolometer.

Systems and methods for enhanced bolometer response

A microbolometer is disclosed, including a bottom multilayered dielectric, having a first silicon oxynitride layer and a second silicon oxynitride layer disposed above the first silicon oxynitride layer, the first and second silicon oxynitride layers having different refractive indices. The microbolometer further includes a detector layer disposed above the bottom multilayered dielectric, the detector layer comprised of a temperature sensitive resistive material, and a top dielectric disposed above the detector layer.

Multilayered microbolometer film deposition

Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a second metal layer formed on the first metal layer; a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills an inner portion of the contact; and a first passivation layer formed on the third metal layer.

A method of fabricating a semiconductor device includes patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas. A layer of metal is deposited over the patterned layer of photoresist, the metal layer includes metal feature portions in the metal feature areas, residual metal areas in the residual metal areas, and residual metal flaps at the edges of the metal feature portions. The wafer is sprayed with high-pressure solvent at a pressure to dissolve the layer of photoresist and to physically remove the residual metal portions from the residual metal areas, leaving only at least a portion of the residual metal flaps. The wafer is sprayed with a stream of frozen gas particles to remove the residual metal flaps.

Metal lift-off systems and methods using liquid solvent and frozen gas

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Santa Barbara, CA, United States of America

Patrick Franklin