Bbc Brown, Boveri & Company, Limited

Patrick De Bruyne

Lutz Niemeyer

Andre A Jaecklin

Roland Sittig

Dieter Eisele

A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

Housing for high-power semiconductor components with large diameter

A safety device for protecting a controllable high power semiconductor component having an anode, a cathode, and a control electrode, against excessive voltage rise rates dU/dt and comprising: a semiconductor body having at least four sequential zones of alternating and opposite conductivity type, the second sequential zone being provided with a high concentration region having a higher concentration of conductivity type determining impurities than the rest of the second sequential zone; a first emitter electrode contacting the first of the four sequential zones of the semiconductor body and adapted to be connected to the control electrode of the controllable high power semiconductor component; a second emitter electrode contacting the fourth of the four sequential zones of the semiconductor body and adapted to be connected to the anode of the controllable high power semiconductor component; a gate electrode contacting the high concentration region of the second sequential zone of the semiconductor body; and an ohmic conductor connected between the first emitter electrode and the gate electrode.

Safety device for protecting semiconductor components against excessive

An arrangement for semiconductor power components in an installation, in which at least one semiconductor power component is placed between contact pieces and is enclosed in a housing exhibiting an insulator and connecting pieces. The arrangement includes current conductors which promote safety and prevent explosion by absorbing electric arcs formed in the installation. The current conductors are placed laterally adjacent to the contact pieces and annularly surrounding the latter, separated from the interior wall of the insulator by narrow gaps. Additional embodiments of the present invention employ reinforcing elements around the housing, and explosion guards around the housing, thereby further enhancing installation safety.

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Siggenthal, Switzerland

Patrick De Bruyne