USA As Represented by Secretary of the Navy

Patrick Craig Sims

Anna Leese De Escobar

Pamela A Boss

David Kurt Gaskill

John D Rockway

Andrew Burke Sabater

Oren Sternberg

Osama M Nayfeh

Israel Perez

Teresa Emery-Adleman

Kara C Sorensen

Robert D George

Anna Y Obraztsova

Brad Liu

Sam Carter

Tom Reinecke

Sara R Wheeland

A system and method sorts particles suspended in a fluid. The system includes a transverse flow filter and a microfluidic sorter. The transverse flow filter concentrates the particles in a retained portion of the fluid. The microfluidic sorter sorts the particles and includes a delivery channel and at least one sorting stage. The delivery channel is dimensioned to permit passage of all the particles in the retained fluid from the transverse flow filter. The delivery channel delivers the particles in the retained fluid to a respective input for each sorting stage and exhausts a remainder of both the particles and the retained fluid at a drain output. Each sorting stage has a labyrinth of interconnected passageways dimensioned to permit passage from the respective input to a respective output for the sorting stage of those of the particles smaller than a respective size for the sorting stage.

Systems and method for sorting particles suspended in a fluid

A true random number generator including a transistor, a first voltage source, a second voltage source, and a comparator. The transistor has a first electrode, a second electrode, and a third electrode. Two of the electrodes are electrically connected by a channel of conductive nanomaterial. The first voltage source is electrically connected to the first electrode and the second voltage source is electrically connected to the second electrode. The comparator is electrically connected to the third electrode and is configured to classify a measured electrical property at the third electrode as either HIGH or LOW based on a comparison of the measured electrical property with a reference value. The measured electrical property varies over time due to random telegraph signals (RTSs) due to defects in the transistor.

Nanomaterial-based true random number generator

A method includes depositing a layer of silicon oxide onto a layer of silicon carbide; ion implanting the layer of silicon carbide, annealing the ion implanted layer of silicon carbide to produce defects within the layer of silicon carbide, performing photolithography using a mask layer on regions of the layer of silicon carbide to define regions for electrode deposition, removing the layer of silicon oxide from the layer of silicon carbide in the one or more regions for electrode deposition, forming one or more electrodes by depositing indium tin oxide (ITO) in each of the regions for electrode deposition, performing a first lift-off operation to remove the mask layer surrounding the electrodes, depositing a passivation and gate silicon oxide layer on top of the layer of silicon carbide and the electrodes, and performing a second lift-off operation to fabricate an optically transparent ITO gate between the electrodes.

Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation

Growing community of inventors

Laguna Hills, CA, United States of America

Patrick Craig Sims