Iqe Plc

Patrick Chin

Michael S Lebby

Andrew C Clark

Rytis Dargis

Rodney Pelzel

Howard Williams

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

Integrated epitaxial metal electrodes

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

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Zhubei, Taiwan

Patrick Chin