Applied Materials, Inc.

Kla Tencor Corporation

Patrick C Genis

Zhiyuan Ye

Shu-Kwan Danny Lau

Adel George Tannous

An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assemblies include light sources, a cooling plate, optical fibers, and irradiation windows.

EPI chamber with full wafer laser heating

Method and system for laser crystal degradation compensation are disclosed. The method includes: defining a plurality of sites on a frequency converting crystal; determining a degradation rate associated with each of the plurality of sites; determining an amount of time T wherein a site is continuously operable within a tolerated variation of at least one beam parameter, the amount of time T being determined based on the tolerated variation of the at least one beam parameter and the degradation rate; determining an amount of time t wherein t is a fraction of T; and iteratively shifting among the plurality of sites, wherein each of the plurality of sites is utilized continuously for a duration of time t for each iteration.

Growing community of inventors

Boulder Creek, CA, United States of America

Patrick C Genis