H.c. Starck Solutions Euclid, LLC

H.c. Starck Gmbh

Patrick Alan Hogan

Gary Alan Rozak

Mark E Gaydos

Shuwei Sun

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

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Somerville, MA, United States of America

Patrick Alan Hogan