Asml Netherlands B.v.

Asml Holding N.v.

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Patricius Aloysius Jacobus Tinnemans

Jeroen Johannes Sophia Maria Mertens

Christiaan Alexander Hoogendam

Arie Jeffrey Den Boef

Erik Roelof Loopstra

Bob Streefkerk

Johannes Jacobus Matheus Baselmans

Simon Gijsbert Josephus Mathijssen

Patrick Warnaar

Martinus Cornelis Maria Verhagen

Jacobus Johannus Leonardus Hendricus Verspay

Antonius Johannus Van Der Net

Sjoerd Nicolaas Lambertus Donders

Bernardus Antonius Slaghekke

Johannes Catharinus Hubertus Mulkens

Helmar Van Santen

Aleksey Yurievich Kolesnychenko

Boris Menchtchikov

Erik Theodorus Maria Bijlaart

Franciscus Godefridus Casper Bijnen

Theodorus Petrus Maria Cadee

Edo Maria Hulsebos

Joost Jeroen Ottens

Hans Jansen

Marco Koert Stavenga

Ralph Brinkhof

Stoyan Nihtianov

Nicolaas Ten Kate

Johannes Henricus Wilhelmus Jacobs

Michel Riepen

Franciscus Johannes Joseph Janssen

Johannes Anna Quaedackers

Willem Marie Julia Marcel Coene

Herman Boom

Frederik Eduard De Jong

Christianus Gerardus Maria De Mol

Richard Moerman

Roelof Frederik De Graaf

Nitesh Pandey

Franciscus Johannes Herman Maria Teunissen

Armand Eugene Albert Koolen

Aschwin Lodewijk Hendricus Johannes Van Meer

Hugo Augustinus Joseph Cramer

Justin Lloyd Kreuzer

Martin Jacobus Johan Jak

Heine Melle Mulder

Hakki Ergün Cekli

Henricus Johannes Lambertus Megens

Maurits Van Der Schaar

Arno Jan Bleeker

Jan-Gerard Cornelis Van Der Toorn

Markus Franciscus Antonius Eurlings

Paul Van Der Veen

Maikel Robert Goosen

Weitian Kou

Richard Johannes Franciscus Van Haren

Frank Staals

Kaustuve Bhattacharyya

Koen Jacobus Johannes Maria Zaal

Haico Victor Kok

Willem Jurrianus Venema

Sander Bas Roobol

Jason Douglas Hintersteiner

Wenceslao A Cebuhar

Hendrikus Robertus Marie Van Greevenbroek

Alessandro Polo

Laurentius Catrinus Jorritsma

Nan Lin

Hans Butler

Everhardus Cornelis Mos

Pieter Willem Herman De Jager

Wim Tjibbo Tel

Johannes Petrus Martinus Bernardus Vermeulen

Harmen Klaas Van Der Schoot

Marc Wilhelmus Maria Van Der Wijst

Scott Anderson Middlebrooks

Sven Antoin Johan Hol

Alexander Ypma

Robert John Socha

Henricus Petrus Maria Pellemans

Sebastianus Adrianus Goorden

Kars Zeger Troost

Huibert Visser

Simon Reinald Huisman

Edwin Johan Buis

Marinus Jochemsen

Ruud Antonius Catharina Maria Beerens

Adrianus Cornelis Matheus Koopman

Gerrit Johannes Nijmeijer

Erwin John Van Zwet

Gerbrand Van Der Zouw

Borgert Kruizinga

Xing Lan Liu

Igor Matheus Petronella Aarts

Jan Frederik Hoogkamp

Anton Bernhard Van Oosten

Minne Cuperus

Wilhelmus Henricus Theodorus Maria Aangenent

Stefan Carolus Jacobus Antonius Keij

Leon Paul Van Dijk

Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

Method for filtering an image and associated metrology apparatus

Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

Metrology system and method for determining a characteristic of one or more structures on a substrate

Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

Metrology method and apparatus and computer program

Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

Metrology apparatus and method for determining a characteristic of one or more structures on a substrate

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Metrology method and associated metrology and lithographic apparatuses

Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and a heater.

Lithographic apparatus and device manufacturing method involving a heater

A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.

Method for determining deformation

A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Computational metrology

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

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Hapert, Netherlands

Patricius Aloysius Jacobus Tinnemans