E.i. Dupont De Nemours and Company

Patricia A Morris

John James Barnes

John Carl Steichen

August Ferretti

Charles E Miller

John D Bierlein

Michael Joseph Piovoso

Thurman E Gier

Eugene Michael McCarron

Albert A Ballman

Alicia Marie Walsh

Kenneth S Dahl

Eugene Michael Mccarron

Disclosed herein is a method and apparatus for reducing a nitrogen oxide, and the control thereof.

Method and apparatus for reducing a nitrogen oxide, and control thereof

Disclosed herein is a method and apparatus for analyzing, sensing and measuring information related to the concentrations of various gases, including NO, hydrocarbons, carbon monoxide and oxygen, in a multi-component gas system using chemical sensors and chemical sensor arrays. The sensors and sensor arrays use chemo/electro-active materials to analyze and detect the presence of gases.

Method and apparatus for analyzing mixtures of gases

A computer-implemented system and method for converting the resistances of an array of metal oxide sensors into constituents and concentrations of a multi-component gas provided around the sensor array. The method includes preprocessing the resistances of the sensor array; selecting a model that calculates the constituents and concentrations of the multi-component gas based on the preprocessed resistances; and post-processing the constituents and concentrations of the multi-component gas generated by the selected model to provide the actual constituents and concentrations of the multi-component gas.

Computer-implemented system and method for analyzing mixtures of gases

Disclosed herein is a method and apparatus for controlling a process, such as a chemical reaction, that emits a multi-component mixture of gases; and for controlling a device to which is transmitted a product of a chemical reaction that emits a multi-component mixture of gases.

Method and apparatus for controlling a gas-emitting process and related devices

Disclosed herein is a method and apparatus for analyzing, sensing and measuring the concentrations of various gases, including NO, hydrocarbons, carbon monoxide and oxygen, in a multi-component gas system using chemical sensors and chemical sensor arrays. The sensors and sensor arrays use chemo/electro-active materials to analyze and detect the presence of gases.

An infrared thermographic technique for rapid parallel screening of compositional arrays of potential chemical sensor materials has been developed. The technique involves applying a voltage bias and the associated current to the sample array during screening. The thermographic response is amplified by the resistance change that occurs with gas adsorption, and is directly monitored as the temperature change associated with I R heating. This technique can also be used to determine n- or p-type character for the semiconductor in question.

Infrared thermographic screening technique for semiconductor-based chemical sensors

A process is disclosed for treating a crystal of MTiOXO.sub.4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof and X is selected from the group consisting of P, As and mixtures thereof, which includes the step of heating said crystal in the presence of a mixture of MTiOXO.sub.4 and at least one inorganic compound of one or more monovalent cations selected from the group consisting of Rb+, K+, Cs+ and Ti+ (said inorganic compound(s) being selected to provide a source of vapor phase monovalent cation and being present in an amount sufficient to provide at least a 0.1 mole % excess of the monovalent cation in relation to the M in the MTiOXO.sub.4 in said mixture) at a temperature of from about 400.degree. C. to 950.degree. C. and a pressure of at least 14 psi, and in the presence of a gaseous source of oxygen for a time sufficient to decrease the optical damage susceptibility of said crystal.

Process for reducing the damage susceptibility in optical quality

A composition is disclosed which consists essentially of doped crystalline MTiOXO.sub.4 (wherein M is selected from the group consisting of K, Rb and Tl, X is selected from the group consisting of P and As) which contain at least about 100 ppm total of at least one dopant selected from the group consisting of Ga, Al and Si. The compositions generally have low ionic conductivity, and may be prepared using an improved flux process wherein Ga, Al and/or Si dopant is added to the flux in a total amount of at least about 0.5 mole % and the crystallization temperature is controlled to provide a crystalline composition containing the desired amount of dopant.

Growing community of inventors

Montchanin, DE, United States of America

Patricia A Morris