Commissariat a L'energie Atomique

Patrice Noel

Chantal Arena

Jean-Pierre Joly

Michel Papapietro

A heating floor or plate for heating an object such as a substrate placed on its surface. A plate is provided whose surface temperature can be accurately adjusted so that the heat quantity supplied by two surface zones of the plate can be different even if the zones are small and contiguous. The plate has n zones, each having placed therein an electrically conducting heating element. n+1 sensors are used to measure the temperature of the plate, where n is an integer greater than 1. Data output from the sensors is processed and compared with at least one reference value and the result used to regulate the intensity of the current flowing in the elements based on the comparison.

Heating plate for heating an object placed on its surface and chemical

The invention relates to a gaseous phase chemical treatment reactor for wafers. The aim of the invention is to produce a reactor in which only the face of the wafer to be treated is in fact treated. This aim is achieved with the aid of a reactor comprising at least one treatment chamber (19) located within a main chamber (9) and connected by one of its ends to means (17) for injecting a treatment gas onto a wafer (1) and by its other end to a means (15) for securing said wafer, in that the latter is gripped between a heating susceptor or base (13) and the retaining means (15) in such a way as to seal said treatment chamber (19) and maintain within the latter a pressure below that of the main chamber (9). The invention more particularly relates to reactors for depositing tungsten on silicon wafers.

Growing community of inventors

Sassenage, France

Patrice Noel