Stmicroelectronics S.a.

Centre National De La Recherche Scientifique

Pascal Salome

Pascal Nouet

Stéphanie Dournelle

Philippe Flatresse

Christophe Entringer

Guy Mabboux

Florence Azais

Florence Azaïs

Benjamin Caillard

An embodiment of a protection circuit, comprising a first PNP-type bipolar transistor and a second NPN-type bipolar transistor, the base of the first transistor being connected to the collector of the second transistor and the collector of the first transistor being connected to the base of the second transistor, in which a MOS transistor is connected between the collector and the emitter of the second transistor.

Gated thyristor and related system and method

A circuit of protection against electrostatic discharges, comprising a first MOS transistor for detecting a leakage current between a first input node of a circuit to be protected and a second node at an output voltage, a second MOS transistor constitute of a switch directly connecting said nodes, and a leakage current amplifier in the first transistor to control the second one.

Protection of an integrated circuit against electrostatic discharges

An electrostatic discharge protection device comprises several thyristors which are connected in parallel between two nodes of an electrical circuit. It also includes a control circuit having an output connected to the control trigger terminal input of each of the thyristors. In response to an abnormal variation in a voltage between the two nodes being detected, the control circuit initiates a triggering current on the output so as to trigger the thyristors to conduct current between the two nodes. Preferably, the thyristors are arranged in a semiconductor substrate so as to have low hold voltages and small geometrical dimensions.

Electrostatic discharge protection device comprising several thyristors

A protection device includes a switching transistor (M ), connected between the gate of the output transistor (TS ) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M ), which are capable of ensuring that the switching transistor (M ) is off when there is no electrostatic discharge at the drain of the output transistor (TS ) and capable of turning the switching transistor (M ) on when there is an electrostatic discharge at the drain of the output transistor (TS ).

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Vif, France

Pascal Salome