Stmicroelectronics S.r.l.

Stmicroelectronics S.a.

Stmicroelectronics (rousset) Sas

Université´ D'aix-Marseille

France Universite D'aix-marseille

Pascal Masson

Arnaud Regnier

Jean-Michel Mirabel

Romain Laffont

Rachid Bouchakour

Richard P Fournel

Philippe Candelier

Philippe Gendrier

Virginie Bidal

A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.

Non-volatile reprogrammable memory

The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.

Floating-gate MOS transistor with double control gate

Growing community of inventors

Marseilles, France

Pascal Masson