Em Microelectronic-marin Sa

Pascal Kunz

Antal Banyai

The present invention concerns a method for measuring a chip integrated structure (,) including at least one coil (,) having a plurality of turns (,). The present invention is characterized on the following steps: measuring the resistance across the terminals of first and second portions of said coil (,), corresponding to two different numbers of turns of the coil; computing the ratio of the measured resistances across the terminals of first and second portions of the coil (,); comparing the ratio to a constant measured from a sample of resistance measurements made on coils of identical geometry; and determining the presence or the absence of a short circuit between at least two turns of one of said portions of said coil (,), when the ratio is different from or equal to said constant respectively. The present invention further concerns an integrated circuit which is able to allow implementation of the above mentioned measuring method.

Measuring method for detecting a short-circuit between the turns of a coil integrated on a chip, and integrated circuit structure adapted to such a measuring method

The present invention concerns an integrated circuit structure (1) formed in a substrate (2) and including at least one integrated circuit element (3, 4), an antenna coil (5) capable of transmitting and/or receiving data, and associated with said integrated circuit element(s) (3, 4); and a metal protective ring (20) situated at the periphery of the integrated circuit structure (1). The present invention is characterised in that said protective ring (20) comprises at least one ohmic interruption, so that it does not form a closed circuit on itself. The integrated circuit structure (1) according to the invention is improved in that the operation of the antenna coil (5) is made insensitive to the presence of the protective ring (20).

Monolithic integrated circuit and antenna coil structure comprising a

A wafer (10) is described comprising several integrated optoelectronic circuits of a first type (11), such circuits of the first type each comprising electronic modules (13) and at least a first photodiode (14). Said wafer (10) is characterised in that it further comprises at least one integrated optoelectronic circuit of a second type (21) comprising electronic modules (23), at least one second photodiode (24) and at least one bonding pad (25) intended to be connected to an external measuring apparatus, said at least one bonding pad (25) being superposed onto said at least one second photodiode (24) so that said at least one circuit (21) of the second type may be used as a circuit for verifying the manufacturing of said wafer.

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Neuchatel, Switzerland

Pascal Kunz