Nxp Usa, Inc.

Freescale Semiconductor,inc.

Nxp B.v.

Pascal Kamel Abouda

Evgueniy Nikolov Stefanov

Olivier Tico

Yuan Gao

Nicolas Roger Michel Claude Baptistat

Badr Guendouz

Patrice Besse

Keith L Kraver

Alexis Nathanael Huot-Marchand

Jean-Christophe Patrick Rince

Bertrand Vrignon

Soufiane Serser

Domenico Desposito

Hiba Mediouni

Matthieu Aribaud

Celine Hounaïda Abouda

Juliette Angèle Vedelago

Alexis Nathanael Huot Marchand

A receiver circuit comprising: an input-pin; a receiver-input-node; a ground-pin; an internal-node that is connected to the input-pin; and a MOSFET. The MOSFET has a conduction channel connected in series between the internal-node and the receiver-input-terminal; and a gate terminal, the voltage at which sets the conductivity of the conduction channel. The receiver circuit also includes an amplifier that: has an input terminal that is connected to the internal-node; and provides a voltage control signal to the gate terminal of the MOSFET such that the voltage at the internal-node with respect to the ground-pin is constant.

Receiver circuit

A circuit is disclosed, comprising: an inverter comprising first and second inverter transistors, each having: a gate terminal connected in common to a drive node, a source terminal, connected to respective first and second voltage rails, and a drain terminal connected to a common first resistor, wherein an inverter output node is connected between the first resistor and the drain terminal of a shorting one of the transistors; a tying transistor connected between the drive node and the voltage rails to which the shorting transistor is connected; a biasing circuit connected to the tying transistor's control terminal and configured to be controlled by a local drive signal and bias the tying transistor control terminal to a voltage such that the tying transistor ties the drive node of the relevant voltage rail in response to the drive signal having a first state; and a circuit for providing the local drive signal.

Circuits for inverters and pull-up/pull-down circuits

A sensor interface circuit includes a continuous-time capacitance-to-voltage (C/V) converter having C/V input and output ends, the C/V input end being configured for electrical connection with first and second sense nodes of a capacitive sensor. A filter circuit is electrically coupled to the C/V output ends. The filter circuit has first and second resistors at corresponding first and second filter input ends of the filter circuit, a capacitor connected between first and second filter output ends of the filter circuit, and a chopper circuit interposed between the first and second filter input ends and the first and second filter output ends. A buffer circuit is electrically coupled with the first and second filter output ends of the filter circuit. The filter circuit applies low pass filtering of sense signals from the capacitive sensor before sampling and demodulation operations to reduce high-frequency interference in the sense signals.

Sensor interface circuit, sensor system, and method of signal measurement

Stabiliser circuits and methods are disclosed, for stabilizing a voltage at a gate driver terminal of a gate-driver for a driven transistor to a one of a high voltage and a low voltage, the stabilizer circuit comprising: a first transistor and a second transistor having respective first and second main terminals and connected in series between the gate voltage terminal and a first reference voltage terminal; and a low-pass filter connected between a control terminal of the first transistor and the gate driver terminal; wherein the first transistor is configured to have a threshold voltage which is less that a threshold voltage of the driven transistor; and the second transistor has a control terminal which is configured to be connected to a voltage which is an oppositive of the voltage at the gate driver terminal.

Pull up and pulldown stabiliser circuits and methods for gate drivers

An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Electro-static discharge device with integrated capacitance

An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

Multi-purpose output circuitry

There is disclosed herein an SOI IC comprising an integrated capacitor comprising a parallel arrangement of a metal-insulator-metal, MIM, capacitor, a second capacitor, a third capacitor, and a fourth capacitor: wherein the second capacitor comprises as plates the substrate and a one of a plurality of semiconductor layers having an n-type doping, and comprises the buried oxide layer as dielectric; the third capacitor comprises as plates the polysilicon layer and a further one of a plurality of semiconductor layers having an n-type doping, and comprises an insulating layer between the plurality of semiconductor layers and the metallisation stack as dielectric; andthe fourth capacitor comprises as plates the polysilicon plug and at least one of the plurality of semiconductor layers and comprises the oxide-lining as dielectric, wherein the oxide lining and the polysilicon plug form part of a lateral isolation (DTI) structure.

Integrated capacitors in an integrated circuit

An integrated circuit for use in a differential network bus node comprising: a transceiver having a first transceiver input-output terminal and a second transceiver input-output terminal; a physical layer high terminal connected to the first transceiver input-output-terminal; a physical layer low terminal connected to the second transceiver input-output terminal; and a physical layer interface circuit comprising: a first low frequency RC matching circuit and a first high frequency RC matching circuit each connected between the first transceiver input-output-terminal and a first reference terminal; and a second low frequency RC matching circuit and a second high frequency RC matching circuit each connected between the second transceiver input-output terminal and a second reference terminal.

Integrated circuit with physical layer interface circuit

An example apparatus that employs circuitry operating in response to digital clock signal circuitry. The apparatus includes first circuitry and second circuitry. The first circuitry produces a high-frequency digital clock signal characterized by a high frequency which carries radiative noise interference and by a modulated low-frequency digital clock signal characterized by a low frequency modulated by a first type of modulation. The second circuitry produces another low-frequency digital clock signal by combining a disparate modulation signal and a feedback signal derived from the other low-frequency digital clock signal, wherein the disparate modulation signal is characterized by modulating the feedback signal via a second type of modulation that is independent of the first type of modulation and by cancellation/blocking of the radiative noise interference manifested by the circuitry operating in response to the digital clock signal circuitry.

Apparatuses and methods involving independent modulations of a digital clock signal for different frequency domains

A compensation circuit configured for coupling to a voltage source and a reference circuit. The voltage source is configured for supplying a supply voltage to the compensation circuit and the reference circuit. The reference circuit includes a first circuit node and a reference output electrically coupled to the first circuit node for outputting a reference signal having a constant reference amplitude. The compensation circuit includes a transient converter for converting a first transient perturbation of the supply voltage into a first compensation electrical signal proportional to said first transient perturbation, and an adder coupled to the transient converter for adding the first compensation electrical signal to an electrical signal at the first circuit node with a first polarity opposite to a disturbance polarity of a disturbance of the electrical signal in response to the first transient perturbation.

Compensation circuit

A current regulator circuit to improve electromagnetic compatibility performance operation of an IC device includes an input to receive a regulated voltage signal, an output to provide an output voltage at a desired voltage level, the output voltage exhibiting noise from a load, a first field effect transistor FET including a first source electrode coupled to the input, a first drain electrode coupled to the output, and a first gate electrode, a voltage clamp circuit coupled to the output, the voltage clamp circuit configured to conduct a varying current based upon the noise, a constant current source to provide a constant current, and a second FET including a second source electrode coupled to the output, a second drain electrode coupled to the constant current source and to the first gate electrode, and a second gate electrode coupled to the voltage clamp circuit to mirror the varying current in the second FET.

Current and voltage regulation method to improve electromagnetice compatibility performance

A clock modulation module and method for generating a modulated clock signal are provided. The clock modulation module comprises a comparator arranged to receive at a first input thereof a waveform signal, the waveform signal comprising a frequency representative of a frequency of a reference timing signal. The comparator is further arranged to receive at a second input thereof a reference voltage signal, and to output a modulated timing signal based on a comparison of the waveform signal and the reference voltage signal. Wherein the clock modulation module is arranged to output a modulated clock signal derived at least partly from the modulated timing signal output by the comparator.

Method and apparatus for modulating a clock signal

A mixed mode integrated circuit, a method of providing a controllable test clock signal to a sub-circuitry of the mixed-mode integrated circuit and a method of detecting current paths causing violations of electromagnetic compatibility standards in the mixed mode integrated circuit are provided. The mixed mode integrated circuitcomprises in addition to a clock networkan integrated test clock signal generatorto generate test clock signals that are provided via controllable multiplexersto an analog and digital sub-circuitry, respectively, of the mixed-mode integrated circuit. The test clock signals are generated on basis of an input test clock signal having a controllable frequency. The clock network generates clock signals for the sub-circuitries that are used by the sub-circuitries under normal operational conditions. The controllable multiplexers provide either the test clock signal to a specific sub-circuitry or a clock signal received from the clock network.

Mixed mode integrated circuit, method of providing a controllable test clock signal to a sub-circuitry of the mixed-mode integrated circuit and method of detecting current paths causing violations of electromagnetic compatibility standards in the mixed mode integrated circuit

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Saint Lys, France

Pascal Kamel Abouda