Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Nxp B.v.

Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Université Grenoble Alpes

Pascal Besson

Virginie Loup

Alexandra Abbadie

Marie-Noëlle Semeria

Maud Vinet

Francois Roy

Michel Marty

Didier Dutartre

Jean-Michel Hartmann

Bernard Previtali

Jens Prima

Laurent J Vallier

Markus Müller

Alexandre Mondot

Christian Vizioz

Pierre-Edouard Raynal

A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.

Method for fabricating a monocrystalline structure

A method for performing selective etching of a semiconductor material in solution having the following successive steps: a) providing a substrate having a layer of amorphous semiconductor material to be etched and a layer of crystalline semiconductor material; b) oxidizing the surfaces of the layers of amorphous semiconductor material and of crystalline semiconductor material so as to form a first protective layer at the surface of the amorphous semiconductor material and a second protective layer at the surface of the crystalline semiconductor material; c) etching the first protective layer and the layer of amorphous semiconductor material with an alkaline etching solution, the etch rate vof the first protective layer being higher than the etch rate vof the second protective layer.

Method for performing selective etching of a semiconductor material in solution

A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.

Selective removal of a silicon oxide layer

A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Microelectronic device, in particular back side illuminated image sensor, and production process

A method of wet cleaning a surface is disclosed. The method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, includes the following successive steps: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried.

Method of wet cleaning a surface, especially of a material of the silicon-germanium type

A process for fabricating a transistor that includes a gate located in the immediate proximity of a dielectric includes a step of etching a layer of gate material. The gate etching step includes plasma etching of the gate layer over the major portion of its thickness so as to laterally define the gate and chemical etching of a residual portion of the gate layer so as to define the gate as far as the dielectric.

Manufacturing process for a transistor made of thin layers

Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

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Notre Dame de Mesage, France

Pascal Besson