Globalwafers Co., Ltd.

Parthiv Daggolu

Soubir Basak

Gaurab Samanta

Nan Zhang

Sumeet S Bhagavat

Eric Michael Gitlin

William L Luter

Benjamin Michael Meyer

Richard Joseph Phillips

Robert Wendell Standley

HyungMin Lee

Jae-Woo Ryu

Jae Woo Ryu

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

Systems for production of low oxygen content silicon

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

Systems and methods for production of low oxygen content silicon

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

Crystal pulling systems for growing monocrystalline ingots from a melt of semiconductor or solar-grade material are described. The crystal pulling systems include seed chuck assemblies designed to reduce formation of deposits on components of the crystal pulling systems by reducing and inhibiting the formation of gas flow recirculation cells within the crystal pulling systems.

Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process

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Creve Coeur, MO, United States of America

Parthiv Daggolu