Micron Technology Incorporated

Parthasarathy Gajapathy

Kallol Mazumder

David R Brown

Daniel B Penney

Brian W Huber

Thanh K Mai

Brian J Ladner

Disclosed are methods for reading data from a storage buffer. One such method may include retrieving a first set of data during a first period of time. The method may also include delaying data retrieval during a second period of time after the first period of time. The method may include outputting at least a portion of the first set of data during the first period of time and the second period of time. The first period of time is substantially similar to the second period of time.

Methods for reading data from a storage buffer including delaying activation of a column select

A memory device includes a command interface that when operating receives a write command, an input output interface that when in operation receives data signals in conjunction with the write command, and error detection circuitry coupled to the input output interface. The error detection circuitry is configured to generate a first signal indicative of a first period of time during which a first determination is made regarding a first portion of the data signals utilizing a first data strobe signal as a first clock signal, generate a second signal indicative of a second period of time during which a second determination is made regarding a second portion of the data signals utilizing a second data strobe signal as a second clock signal, and generate a control signal based upon the first signal, the second signal, and a slower of the first data strobe signal and the second data strobe signal.

System and method to control memory error detection with automatic disabling

Systems and methods for injecting a toggling signal in a command pipeline configured to receive a multiple command types for the memory device. Toggling circuitry is configured to inject the toggling signal into at least a portion of the command pipeline when the memory device is in a power saving mode and the command pipeline is clear of valid commands. The toggling is blocked from causing writes by disabling a data strobe when a command that is invalid in the power saving mode is asserted during the power saving mode.

Power savings mode toggling to prevent bias temperature instability

A multi-phase clock generator has a set of transistors, a first latch, and a second latch. The set of transistors may be arranged in a sense amplifier latch architecture, in which the set of transistors include a first inverter and a second inverter. The first inverter may provide a first phase data strobe signal and the second inverter may provide a second phase data strobe signal. The first latch and the second latch are coupled to the set of transistors. The set of transistors may receive a first portion of current at the first inverter and a second portion of current at the second inverter. The set of transistors may amplify the first portion of current in response to the first portion being greater than the second portion. The set of transistors may also drive the first phase data strobe signal using the amplified first portion.

DDR5 four-phase generator with improved metastability resistance

The systems and methods provided herein relate to a command interface/memory device that supports multiple modes of command acquisition. A current command acquisition mode from a set of supported command acquisition modes that each define a corresponding command execution frequency is identified. Based upon the identified mode, clock cycles that will be used to acquire portions of a command address from are identified. The portions of the command address are acquired from the identified clock cycles and a command based upon the acquired portions of the command address is executed.

Systems and methods for frequency mode detection and implementation

A semiconductor device includes a clock gating tree comprising a first clock gating stage and a second clock gating stage. The first clock gating stage is configured to receive an activate detection signal and to activate clocking events in the second clock gating stage in response to the activate detection signal. The clocking events are not activated in the absence of the activate detection signal.

Command signal clock gating

The systems and methods provided herein acquire a command over multiple clock cycles and fires it. When a chip select signal (CS) transitions, a first portion of a command address is captured in a first clock cycle after the CS transitions. Then, a second portion of the command address is captured in a second clock cycle immediately after the first clock cycle or in a third clock cycle immediately following the second clock cycle. An internal command is fired, using the first portion of the command address and the second portion of the command address.

A semiconductor device includes a first functional block. The first functional block includes one or more input buffers configured to receive signals, and one or more flip-flops configured to receive the signals from the one or more input buffers and output the received signals from the first functional block. The semiconductor device also includes a second functional block coupled to the first functional block. The second functional block includes a decode logic configured to directly receive the output signals from the one or more flip-flops of the first functional block.

Latency improvements between sub-blocks

The systems and methods provided herein identify a command acquisition mode from a plurality of command acquisition modes of a command interface of a memory device. A state of a chip select signal (CS) is identified. When the CS transitions to low from high, a first portion of a command address is captured in a first clock cycle after the CS transitions. When the command acquisition mode is in a first mode, a second portion of the command address is captured in a second clock cycle immediately after the first clock cycle. Otherwise, when the command acquisition mode is in a second mode, the second portion of the command address is captured in a third clock cycle immediately following the second clock signal. An internal command is fired, using the first portion of the command address and the second portion of the command address.

Apparatuses and methods are provided that include a multiplexer configured to generate a plurality of sums of a plurality of data words, wherein the plurality of data words is received by the multiplexer and identified as unmasked based on a data mask. The multiplexer is also configured to determine whether each sum of the plurality of sums indicates that a corresponding data word of the plurality of data words is masked. The multiplexer is further configured to shift the plurality of data words to remove the corresponding masked data word from the plurality of data words. The multiplexer is also configured to output only the data words identified as unmasked based on the data mask.

Apparatuses and methods for shifting data during a masked write to a buffer

Methods and apparatuses for shifting data signals are disclosed herein. An apparatus may comprise a clock generation circuit, a delay path, and a driver. The clock generation circuit may be configured to receive an input clock signal and generate a plurality of clock signals based, at least in part, on the clock signal. A delay path may be coupled to the clock generation circuit and configured to receive the input clock signal and the plurality of clock signals. The delay path may be further configured to receive a data signal and delay the data signal based, at least in part, on the input clock signal and each of the plurality of clock signals. A driver may be coupled to the delay path and configured to receive the delayed data signal, and may further be configured to provide the delayed data signal to a bus.

Methods and apparatuses for shifting data signals to match command signal delay

Disclosed are apparatuses and methods for writing data to a memory array of a buffer. One such apparatus may include a multiplexer that receives data words and a data mask. The multiplexer may change the order of the data words to group masked data words together and to group unmasked data words together. The multiplexer may also change the order of the data mask to group masking bits together and to group unmasking bits together. The apparatus may use the data words with the changed order and the data mask with the changed order to write data to the memory array.

Growing community of inventors

Highland Village, TX, United States of America

Parthasarathy Gajapathy