Intel Corporation

University of South Florida

Spin Memory, Inc.

Spin Transfer Technologies, Inc.

Parshuram Balkrishna Zantye

Mustafa Pinarbasi

Marcin Gajek

Jacob Anthony Hernandez

Arindom Datta

Telesphor Kamgaing

Weng Hong Teh

Tarek A Ibrahim

Daniel N Sobieski

Ashok Kumar

Arun Babu Kumar

Sarah Kay Haney

Chad E Mair

Described embodiments can be used in semiconductor manufacturing and employ materials with high and low polish rates to help determine a precise polish end point that is consistent throughout a wafer and that can cease polishing prior to damaging semiconductor elements. The height of the low polish rate material between the semiconductor elements is used as the polishing endpoint. Because the low polish rate material slows down the polishing process, it is easy to determine an end point and avoid damage to the semiconductor elements. An additional or alternative etch end point can be a thin layer of material that provides a very clear spectroscopy signal when it has been exposed, allowing the etch process to cease.

Polishing stop layer(s) for processing arrays of semiconductor elements

Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

Device, system and method for providing MEMS structures of a semiconductor package

The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene (BCB), SILK, Polyimide, etc. The slurry consists of colloidal suspension of nanoparticle abrasives made up of Tetraethylorthosilicate (TEOS)-derived silica and Zirconium-dioxide (ZrO), its derivatives and any materials modified from ZrOand/or TEOS, in a chemically active medium. The base solution of the slurry consists of deionized (Dl) water, buffering agents like inorganic buffer comprised of inorganic acids such as TRIS-Hcl, its derivatives and variants, cleansing agents, surface modified catalysts, and surface reagents. The organic solvents like isopropyl alcohol, methanol, and other organic alcohols ranging from 0.0005 to 0.05% are employed for active dissolution of the chemical surface complex formed as a result of the slurry chemical action. The inorganic buffer is so chosen that the complex salts resulting from the reaction impart hydrophobicity to the polished thin film surface. The advantages of hydrophobicity include: a) reduced particle adhesion on surface, b) less intensive post-CMP clean, c) no surface degradation or contamination, etc.

CMP slurry for polymeric interlayer dielectric planarization

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Morganville, NJ, United States of America

Parshuram Balkrishna Zantye