Tegal Corporation

Paritosh Rajora

Stephen P DeOrnellas

Alferd Cofer

Leslie G Jerde

Kurt A Olson

Alfred Cofer

A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor and controlling the temperature of the wafer by controlling the pressure of the gas contacting the backside of the wafer and/or providing a heat source such as for example in the chuck or electrode associated with the wafer in order to heat the wafer

Method for minimizing the critical dimension growth of a feature on a semiconductor wafer

A method and apparatus provide for etching a semiconductor wafer using a two step physical etching and a chemical etching process in order to create vertical sidewalls required for high density DRAMs and FRAMs.

Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

Method and apparatus for etching a semiconductor wafer with features

A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor 20 and controlling the temperature of the wafer 26 by controlling the pressure of the gas contacting the backside of the wafer 26 and/or providing a heat source 56 such as for example in the chuck 46 or electrode 28 associated with the wafer 26 in order to heat the wafer 26.

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Petaluma, CA, United States of America

Paritosh Rajora