Tokyo Institute of Technology

Toshiba Materials Co., Ltd.

Parhat Ahmet

Hiroshi Iwai

Hideomi Koinuma

Toyohiro Chikyo

Kuniyuki Kakushima

Yoshinori Kataoka

Yoshinori Konishi

Yoshiyuki Yonezawa

Chunmeng Dou

Jeong-Hwan Song

Young Zo Yoo

A resistance change memory device with a high ON/OFF radio can be provided according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.

Resistance change memory device

A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (110) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (110) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Thin film device and its fabrication method

Growing community of inventors

Tokyo, Japan

Parhat Ahmet