Applied Materials, Inc.

Papo Chen

Schubert S Chu

Errol Antonio C Sanchez

John Boland

Stephen Moffatt

Zhiyuan Ye

Yi-Chiau Huang

Lori D Washington

Xianzhi Tao

Chen-Ying Wu

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Stacked pixel structure formed using epitaxy

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San Jose, CA, United States of America

Papo Chen