Lumentum Technology UK Limited

Stmicroelectronics S.r.l.

Avanex Corporation

Fundacio Institut De Ciencies Fotoniques

Paolo Vergani

Valerio Pruneri

Stefano Balsamo

Marco Ferrera

Pietro Montanini

Laura Maria Castoldi

Ilaria Gelmi

Marco Villa

Flavio Dell'Orto

Giuseppe Cusmai

Nicola Rettani

Luis Martinez Montblanch

Haydn Jones

Stefano Giurgola

Federico Lucchi

There is described an RF waveguide array. The array comprises a substrate comprising a plurality of optical waveguides, each waveguide being elongate in a first direction. An electrical RF transmission line array is located on a face of the substrate and comprises a plurality of signal electrodes and a plurality of ground electrodes, each electrode extending in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides. The ground electrodes include at least one intermediate ground electrode positioned between each pair of signal electrodes. Each intermediate ground electrode includes a portion extending into the substrate.

Waveguide array

The invention relates to a folded Mach-Zehnder modulator. The modulator may comprise a beam splitter configured to split an input light beam into a plurality of light beams. The modulator may comprise a plurality of Mach-Zehnder devices configured to receive one or more of the plurality of light beams. The modulator may comprise a U-turn section configured to receive light beams from the Mach-Zehnder devices and to change the direction of the light beams by substantially 180 degrees. The modulator may comprise a polarization management section configured to combine light beams received from the U-turn section and to output a polarization multiplexed phase modulated light beam.

Optical modulator

The present application discloses a method for producing a stable ultra thin metal film that comprises the following steps: a) deposition, on a substrate, of an ultra thin metal film, such as an ultra thin film of nickel, chromium, aluminum, or titanium; b) thermal treatment of the ultra thin metal film, optionally in combination with an Otreatment; and c) obtaining a protective oxide layer on top of the ultra thin metal film.

Method to prepare a stable transparent electrode

A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbOwith a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z&#x2212; crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.

[object Object]

The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.

Method for manufacturing integrated structures including removing a sacrificial region

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Vimercate, Italy

Paolo Vergani