Stmicroelectronics S.r.l.

Paolo Turbanti

Valerio Bendotti

Orazio Pennisi

Vittorio D'Angelo

Umberto Di Vincenzo

Carlo Lisi

Nicola Del Gatto

Nicola Errico

Enrico Ferrara

Alessandro Cannone

Marzia Annovazzi

Gea Donzelli

A method can be used to control a battery management system. A first voltage drop is sensed between a first terminal of a first battery cell and a second terminal of the first battery cell and a second voltage drop is sensed between a first terminal of a second battery cell and a second terminal of the second battery cell. A faulty condition is detected in the first battery cell or the second battery cell based on the first voltage drop or the second voltage drop. The first voltage drop is swapped for a first swapped voltage drop between a common terminal and the second terminal of the second battery cell.

Method of operating battery management systems, corresponding device and vehicle

In an embodiment, a circuit includes N sensing channels. Each channel includes a first main sensing node and a second redundancy sensing node paired therewith. N analog-to-digital converters (ADCs) are coupled to the first sensing nodes, with digital processing circuits coupled to the N ADCs. A pair of multiplexers are coupled to the second sensing nodes and to the N ADCs with a further ADC coupled to the output of the second multiplexer. An error checking circuit is coupled to the outputs of the second multiplexer and the further ADC to compare, at each time window in a sequence of N time windows, a first digital value and a second digital value resulting from conversion to digital of: an analog sensing signal at one of the first sensing nodes, and an analog sensing signal at the second sensing node paired with the selected one of the first sensing nodes.

Analog-to-digital converter circuit, corresponding system and method

A method for verifying an array cell of a memory device may include determining after each erase pulse or program pulse the threshold of a cell addressed through a selected array word-line and bit-line, by applying an identical voltage ramp to the selected array word-line and to the control gate of a reference cell, while biasing at a certain voltage deselected word-lines through distribution lines of the voltage generated by a charge pump generator. The method may further include temporarily decoupling the deselected word-lines from the distribution lines of the bias voltage for the duration of the voltage ramp.

Control of voltages during erase and re-program operations of memory cells

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Milan, Italy

Paolo Turbanti