Sgsates Componenti Elettronici S.p.a.

Sgs-Thomson Microelectronics S.r.l.

Sgs Microelettronica Spa

Paolo Rosini

Luigi Pascucci

Corrado Villa

Carlo Riva

Marco Olivo

Maurizio Gaibotti

Roberto Finaurini

A CMOS logic circuit for converting a low voltage logic signal with a range O-VCC into a high voltage logic signal with a range O-VPP, which may be entirely made with enhancement-type transistors, comprises an additional p-channel, decoupling transistor functionally connected in series with the p-channel transistor of the CMOS circuit which is connected to the high voltage node VPP and the additional decoupling transistor is driven by a bias voltage tied to the VPP voltage and lower than the latter by a certain preset value. The so-called gated breakdown of p-channel transistors is effectively prevented and furthermore these circuits, destined to operate under a high supply voltage, may be fabricated through a normal CMOS fabrication process not requiring particular fabrication techniques for the p-channel transistors subject to gated breakdown conditions or the formation of depletion-type transistors and without the use of special circuits which require oscillator generated driving signals.

CMOS logic circuit for high voltage operation

The microcomputer is assembled by association of a variable plurality of rectangular functional modules having a fixed first dimension and a variable second dimension. Common busses electrically connect the various modules automatically.

Method of designing integrated microcomputers and integrated

An integrated structure composed of a processing unit (CPU), ROM memory, RAM memory and other optional functions, such as input/output etc., is arranged as a microcomputer, in which all or part of the RAM is a non-volatile memory which carries out during normal operation all the functions of a RAM while also being able, through suitable circuit structures, to store in a permanent (non-volatile) way the data contained therein, retaining the data when the power feed to the circuit is cut off, and recalling the same data at power turn-on. The structure provides for the handling of the non-volatile memory in its different functions, and its arrangement and compatibility with the processing unit, through suitable circuitry and control signals.

Integrated structure microcomputer provided with non-volatile RAM memory

The cell is realized according to a bistable structure which includes a non-volatile memory element. During the normal operation the structure operates as a static RAM cell with the non-volatile element excluded from the circuit. In case of turn-off of the supply line or after suitable control signals, a particular circuit arrangement allows to execute the programming operation of the non-volatile element, that is the information storage, without current absorption. At the turn-on, the automatic reinstatement of the stored information occurs.

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Monza, Italy

Paolo Rosini