Micron Technology Incorporated

Paolo Papa

Massimo Iaculo

Carminantonio Manganelli

Giuseppe D'Eliseo

Alberto Sassara

Luigi Esposito

Lalla Fatima Drissi

Luca Porzio

Yoav Weinberg

Angelo Della Monica

Salvatore Del Prete

Marco Di Pasqua

Xiangang Luo

Eric Kwok Fung Yuen

Giuseppe Ferrari

Xiaolai Zhu

Crescenzo Attanasio

Erika Morvillo

Gerard J Perdaems

Massimo Laculo

Antonio Eliso

Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Adaptive block mapping

Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Clustered parity for NAND data placement schema

Methods, systems, and devices for data relocation operation techniques are described. A memory system may include blocks of memory cells, for example, within a non-volatile memory device of the memory system. The memory system may identify a command to perform a data relocation operation associated with a block of memory cells and may select between a first procedure and a second procedure for performing the data relocation operation. The memory system may select between the first procedure and the second procedure based on whether one or more parameters associated with the data relocation operation satisfy a threshold. For example, the memory system may select the first procedure if the one or more parameters satisfy the threshold and may select the second procedure if the one or more parameters do not satisfy the threshold. The memory system may perform the data relocation operation using the selected procedure.

Data relocation operation techniques

NAND data placement schema

Methods, systems, and devices for device fault condition reporting are described. A host system may transmit, to a memory system, a command to perform an operation. The memory system may receive the command and identify a fault condition associated with performing the operation. The memory system may transmit, to the host system, a message that indicates the fault condition. After the memory system transmits the message, the memory system may enter a safe mode of operation based on identifying the fault condition.

Device fault condition reporting

Devices and techniques for corrupted storage portion recovery in a memory device are described herein. A failure event can be detected during a garbage collection operation on a collection of storage portions (e.g., pages) in a memory array. Here, members of the collection of storage portions are being moved from a former physical location to a new physical location by the garbage collection operation. A reference to a former physical location of a possibly corrupt storage portion in the collection of storage portions can be retrieved in response to the failure event. Here, the possibly corrupt storage portion has already been written to a new physical location as part of the garbage collection operation. The possibly corrupt storage portion can then be rewritten at the new physical location using data from the former physical location.

Corrupted storage portion recovery in a memory device

Methods, systems, and devices for power management techniques are described. A memory system may receive a command to exit a first power mode and enter a second power mode. The first power mode may have a lower power consumption than the second power mode. The memory system may determine whether a duration of an idle period associated with the first power mode satisfies a threshold based on receiving the command to exit the first power mode. The memory system may receive another command associated with executing a flush operation and perform one or more power management operations based on receiving the command and determining that the duration satisfies the threshold.

Power management techniques

A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.

Allocation schema for a scalable memory area

A processing device of a system receives a request to access a selected sector in a memory component. The selected sector is associated with a sector number. The processing device determines a virtual block corresponding to the selected sector. The virtual block is associated with a misalignment factor and a misalignment counter. The processing device determines if the misalignment counter satisfies a threshold criterion. In response to the misalignment counter satisfying the threshold criterion, the processing device generates an updated sector number by shifting the sector number by the misalignment factor and performs the access to the selected sector using the updated sector number. In response to the misalignment counter not satisfying the threshold criterion, the processing device updates the misalignment counter and performs the access to the selected sector using the sector number.

Memory sub-system managing remapping for misaligned memory components

Devices and techniques for managing flash memory are disclosed herein. A memory controller may receive a first program request comprising first host data to be written to the flash memory. The flash memory may comprise a number of storage units with each storage unit comprising a number of storage sub-units. If the first host data is less than a remainder threshold, the memory controller may generate a first program data unit comprising the first host data and first log data describing the flash memory. The memory controller may program the program data unit to the first storage unit of the flash memory, where the first log data is written to a first storage sub-unit of the number of storage sub-unit. The memory controller may also store an indication that the first storage sub-unit is invalid.

Log data storage for flash memory

Devices and techniques for fatal error logging in a memory device are described herein. For example, a read request can be received for a component of the memory device. A fatal error indication of an error that prevents correct execution of read request can be detected. Diagnostic information for the failure indication can be collected. A response to the read request can then be made with a portion of the diagnostic information as payload instead of the user data that would have occupied the payload had the read succeeded. Metadata in the response can be used to communicate an error code.

Fatal error logging in a memory device

In one approach, a computer storage device has one or more pivot tables and corresponding bit maps stored in volatile memory. The storage device has non-volatile storage media that stores data for a host device. The pivot tables and bit maps are used to determine physical addresses of the non-volatile storage media for logical addresses received in commands from the host device that are determined to be within a sequential address range (e.g., LBAs that are part of a prior sequential write operation by the host device). When a command is received by the storage device that includes a logical address within the sequential address range, then one of the pivot tables and its corresponding bit map are used to determine the physical address of the non-volatile storage media that corresponds to the logical address.

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Naples, Italy

Paolo Papa