Stmicroelectronics Gmbh

Qualcomm Incorporated

Eta Semiconductor Inc.

Sgs-thomson Microelectronics Limited

Acu Technology Semiconductor Inc.

Other

Sgs-thomson Microelectronics S.r.l.

Awenyx Inc.

Nirvanalog Inc.

Ado Holding Sa

Carl Sawtell

Thomson Microelectronics

Paolo Menegoli

Fabio Alessio Marino

Francesco Carobolante

Narasimhulu Kanike

Qingqing Liang

Carl K Sawtell

Ender Tunc Eroglu

Whitney Li

Aristotele Hadjichristos

Linda Stacey Irish

Daniele Piazza

Massimiliano Brambilla

Carlo Guardiani

Carlo Vertemara

Leonardo Clementi

Sinan Goktepeli

Marco Morelli

Mark E Rohrbaugh

William Henry Von Novak, Iii

Charles Edward Wheatley

Giorgio Pedrazzini

Giampietro Maggioni

Mark David White, Ii

Gianluca Colli

Plamen Vassilev Kolev

Arvind Govindaraj

Francesco Tricoli

Chinh Dac Nguyen

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

Buried oxide transcap devices

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.

Variable capacitor flat-band voltage engineering

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

Back silicided variable capacitor devices

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.

Lateral devices in silicon-on-insulator (SOI) technology

Techniques for reducing reflected reactance in a wireless power transfer system are provided. An example apparatus includes a resonant network including a variable reactance element, such that the resonant network is configured to resonant when the variable reactance element is at a resonant reactance value, a control circuit operably coupled to the variable reactance element and configured to determine a first reactance value and a second reactance value, such that an output of the PRU is the desired output when the variable reactance element is either the first reactance value or the second reactance value, and the first reactance value is below the resonant reactance value and the second reactance value is above the resonant reactance value, determine an indication of a source reactance associated with a wireless power source, and adjust the variable reactance element to either the first reactance value or the second reactance value based on the indication of the source reactance.

Power receiving unit reflected reactance and tuning methods

Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region. In certain aspects, the first non-insulative region is disposed above a first portion of the semiconductor region and a second portion of the semiconductor region, and the first portion and the second portion of the semiconductor region are disposed adjacent to a first side and a second side, respectively, of the control region or the second non-insulative region.

Layout techniques for transcap area optimization

An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Electronic medical system with implantable medical device, having wireless power supply transfer

An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1 W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

Transcap device architecture with reduced control voltage and improved quality factor

Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Transcap manufacturing techniques without a silicide-blocking mask

In one aspect, an apparatus for wireless receiving power comprises a receive circuit configured to receive wireless power via a magnetic field sufficient to power or charge a load. The apparatus further comprises a tuning circuit comprising a variable reactive element, coupled to the receive circuit, and configured to detune the receive circuit away from a resonant frequency to adjust an output power level to a first output power level. The apparatus comprises a rectifier, comprising a switch, coupled to the receive circuit and configured to rectify an alternating current to a direct current for supplying power to the load. The apparatus comprises a drive circuit configured to actuate the switch when a current through the switch satisfies a first non-zero current value and adjust the first non-zero current value to a second non-zero value to adjust the first output power level to a second output power level.

Devices, systems, and methods for adjusting output power using synchronous rectifier control

An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, a first variable capacitor electrically coupled to the resonator and configured to adjust a first capacitance of the first variable capacitor responsive to a first control signal, a second variable capacitor electrically coupled to the resonator and configured to adjust a second capacitance of the second variable capacitor responsive to a second control signal, and a control circuit configured to adjust and apply the first control signal and the second control signal to the first variable capacitor and the second variable capacitor, respectively, to adjust a resonant frequency of the resonator and a voltage output to the load based on an electrical characteristic indicative of a level of power output to the load.

Wireless power transfer receiver having closed loop voltage control

A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due to the presence of the un-doped channel region, the proposed structure greatly reduces Random Doping Fluctuation (RDF) phenomena decreasing the threshold voltage variation between different devices. In order to control the threshold voltage of the device, a heavily doped poly-silicon or metallic gate is used. However, differently from standard CMOS devices, a high work-function metallic material, or a heavily p-doped poly-silicon layer, is used for an n-channel device and a low work-function metallic material, or heavily n-doped poly-silicon layer, is used for a p-channel FET. Doped or insulating regions are used to increase the control on the channel conductivity.

Body tied intrinsic FET

Resonant rectifier topologies are described for tuning the rectifier so that it performs from an electromagnetic interference (EMI) point of view, while maintaining the voltage regulation at the output that a series tuned rectifier would maintain. Examples include a an inductor of a receive coupler and a rectifier connectable to drive a load, along with first and second filter elements that are each configured to provide an impedance inversion function in a frequency band and that are connected in series between the inductor of a receive coupler and rectifier. In one set of examples, both filter elements are implemented as pair filters, while in other examples the first filter element includes the inductor of a receive coupler in parallel with a capacitance connected to ground.

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San Jose, CA, United States of America

Paolo Menegoli