Stmicroelectronics S.r.l.

Paolo Badala′

Antonello Santangelo

Simone Rascuna′

Gabriele Bellocchi

Anna Bassi

Alessandra Alberti

Process for manufacturing a 3C—SiC layer, comprising the steps of: providing a wafer of 4H—SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C—SiC layer, a Silicon layer on the 3C—SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C—SiC layer. If the Silicon layer is maintained on the 4H—SiC wafer, the process leads to the formation of a Silicon layer on the 4H—SiC wafer. The 3C—SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material

A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device

An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

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Catania, Italy

Paolo Badala′