Micron Technology Incorporated

Politecnico Di Milano

Micro Technology, Inc.

Paolo Amato

Marco Sforzin

Daniele Balluchi

Danilo Caraccio

Marco Dallabora

Emanuele Confalonieri

Graziano Mirichigni

Innocenzo Tortorelli

Luca Porzio

Alessandro Orlando

Federico Pio

Christophe Laurent

Roberto Izzi

Marco Pietro Ferrari

Luca Barletta

Antonino Favano

Corrado Villa

Stephen S Pawlowski

Christophe Vincent Antoine Laurent

Giovanni Campardo

Paolo Fantini

Andrea Martinelli

Mattia Robustelli

Marco Massimo Ferrari

Nicola Del Gatto

Mario Allegra

Joseph M McCrate

Alessandro Tomasoni

Sandro Bellini

Ferdinando Bedeschi

Richard Edward Fackenthal

Angelo Visconti

Giorgio Servalli

Nevil N Gajera

Roberto Gastaldi

Yang Lu

Lingming Yang

Patrick Alan Estep

Federica Cresci

Angelo Alberto Rovelli

Niccolò Izzo

Craig A Jones

Niccolo Izzo

Systems, apparatuses, and methods related to memory bank protection are described. A quantity of errors within a single memory bank is determined and the determined quantity can be used to further determine whether to access other memory banks to correct the determined quantity. The memory bank protection described herein avoids a single memory bank of a memory die being a single point of failure (SPOF).

Memory bank protection

The present disclosure includes apparatuses, methods, and systems for drift compensation for codewords in memory. An embodiment includes a memory device having an array of memory cells, and circuitry to sense a codeword stored in the array, determine a derivative value of a cell metric for each cell of the codeword based on a threshold voltage of that respective cell, a mean of threshold voltage values of each cell of the codeword, and a value proportional to a total quantity of the cells of the codeword and a position of the threshold voltage value of that respective cell in the threshold voltage values of each cell of the codeword, determine the cell metric for which the determined derivative value changes from a first polarity to a second polarity, input the determined cell metric to a Pearson detector, and determine originally programmed data of the codeword using the Pearson detector.

Drift compensation for codewords in memory

Methods, systems, and devices related to auto-referenced memory cell read techniques are described. The auto-referenced read may encode user data to include a predetermined number of bits having a first logic state prior to storing the user data in memory cells. The auto-referenced read may store a total number of bits of the user data having a first logic state in a separate set of memory cells. Subsequently, reading the user data may be carried out by applying a read voltage to the memory cells storing the user data while monitoring a series of switching events by activating a subset of the memory cells having the first logic state. During the read operation, the auto-referenced read may compare the number of activated memory cells to either the predetermined number or the total number to determine whether all the bits having the first logic state has been detected. When the number of activated memory cells matches either the predetermined number or the total number, the auto-referenced read may determine that the memory cells that have been activated correspond to the first logic state.

Auto-referenced memory cell read techniques

A memory device can include a plurality of memory cells including a first group of memory cells and a second group of memory cells programmed to a predefined logic state. The plurality of memory cells includes a memory controller configured to apply a reading voltage to at least one selected memory cell of the first group during a reading operation, apply the reading voltage to the memory cells of the second group, and responsive to the logic state of at least one memory cell of the second group being assessed to be different from the predefined logic state perform a refresh operation of the memory cells of the first group by applying a recovery voltage higher than the reading voltage to assess the logic state thereof and reprogramming the memory cells of the first group to the logic state assessed with the recovery voltage.

Memory device and method for operating the same including setting a recovery voltage

A channel width can depend on a quantity of memory units (e.g., memory dice) that forms a channel as well as a size of the memory units. A memory system can operate with memory units configured to exchange (e.g., transfer to and/or from) data at a rate of smaller granularity that can provide more various options for channel widths, which can further allow a fine-tuned optimization of the memory system in association with its bandwidth and latency in transferring data from and/or to the memory units. The channels whose channel width is fine-tuned with such memory units can be further used to provide a reliability, availability, and serviceability (RAS) protection, such as a redundant array of independent disks (RAID) protection.

Apparatus for redundant array of independent disks

Data protection with error correction/detection capabilities can be provided on a cache line basis. When provided on a cache line basis to collectively protect the cache line data, the error correction/detection capabilities can be provided with fewer number of bits (e.g., error correction code (ECC) and/or cyclic redundancy check (CRC) bits) as compared to providing the same error correction/detection capabilities individually on a subset of the cache line data.

Cache line data protection

Methods, systems, and devices for data correction schemes with reduced device overhead are described. A memory system may include a set of memory devices storing data and check codes associated with the data. The memory system may additionally include a single parity device storing parity information associated with the data. During a read operation of a set of data, a controller of the memory system may detect an error in data associated with a first check code, the data including two or more subsets of the set of data received from two or more corresponding memory devices. The controller may generate candidate data corresponding to one of the two or more subsets using the parity information and remaining subsets of the set of data. Then the controller may determine whether the candidate data is correct by comparing the first check code with a check value generated using the candidate data.

Data correction scheme with reduced device overhead

Systems, apparatuses, and methods related to security management for a ferroelectric memory device are described. An example method can include receiving, at a memory controller and from a host, a command and firmware data. The memory controller can manage a non-volatile memory device, such as a ferroelectric memory device, and the host and the memory controller can communicate using a compute express link (CXL) protocol. The command can be executed to update firmware stored on the non-volatile memory device. The method can further include accessing a first public key from the non-volatile memory device. The method can further include validating the first public key with a second public key within the firmware data. The method can further include validating the firmware data. The method can further include verifying a security version of the firmware data. The method can further include updating the non-volatile memory device with the firmware data.

Security management of ferroelectric memory device

Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the array of memory cells using a reference voltage and determine an amount by which to adjust the reference voltage used to sense the codeword based on an estimated weight of the original codeword, a mean of threshold voltage values of each memory cell of the sensed codeword, and a total quantity of memory cells of the sensed codeword. The circuitry can further be configured to adjust the reference voltage used to sense the codeword by the determined amount.

Systems, apparatuses, and methods related to a controller for managing multiple types of memory are described. A controller includes a front end portion, a central controller portion, a back end portion, and a management unit can manage a first type of memory device that operates according to a first set of timing characteristics and a second type of memory device that operates according to a second set of timing characteristics. The central controller portion is configured to cause performance of a memory operation and comprises a cache memory to buffer data associated performance of the memory operation, a security component configured to encrypt the data before storing the data in the first type of memory device or the second type of memory device, and error correction code (ECC) circuitry to ECC encode and ECC decode the data.

Controller for managing multiple types of memory

A memory controller can include a front end portion configured to interface with a host, a central controller portion configured to manage data, a back end portion configured to interface with memory devices. The memory controller can include interface management circuitry coupled to a cache and a memory device. The memory controller can receive, by the interface management controller, a first signal indicative of data associated with a memory access request from a host. The memory controller can transmit a second signal indicative of the data to cache the data in a first location in the cache. The memory controller can transmit a third signal indicative of the data to cache the data in a second location in the cache.

Memory controller for managing raid information

Systems, methods, and apparatuses are provided for drift compensation for codewords in memory. A memory device comprises memory cells and circuitry configured to sense a codeword stored in the memory cells. The circuitry is further configured to determine a value of a cell metric of each memory cell of the sensed codeword, wherein the value of the cell metric of each of the memory cells is determined based on a summation of a threshold voltage value of each of the memory cells, a mean of the threshold voltage values of the memory cells, and a value proportional to the mean of the threshold voltage values of the memory cells. The circuitry is further configured to determine which cell metric of each of the memory cells has a lowest value, input that cell metric into a Pearson detector, and determine the originally programmed data of the codeword using the Pearson detector.

A memory controller can include media controllers respectively coupled to memory devices. A first set of media controllers can be enabled during a first operating mode of the memory controller and a second set of media controller can be enabled during a second operating mode of the memory controller, during which some features, such as low-power features, can be disabled. Data accessed by each media controller of the first set can be aligned prior to being further transmitted to other circuitries of the memory controller that are dedicated, for example, for the low-power features.

Controllers and methods for accessing memory devices via multiple modes

Methods, systems, and devices for log management maintenance operation and command are described. A method may include receiving, at a memory system, a command associated with maintenance for the memory system and indicating to initiate collecting values of a parameter, storing a value of the parameter, and transmitting, to a host system, a message indicating an availability of the value of the parameter based at least in part on storing the value of the parameter. An additional method may include transmitting, to a host system, a message indicating that a quantity of errors for an address of an address space associated with the memory system satisfies a threshold, receiving a command associated with maintenance for the memory system and indicating a retirement of the address, and retiring the address for the address space associated with the memory system based at least in part on receiving the command.

Log management maintenance operation and command

A redundant array of independent disks (RAID) protection can be provided along with other types of error correction code (ECC) schemes that correct either errors in data prior to the data being input to the RAID process or residual errors from the RAID process. The ECC schemes can utilize parity bits generated using a parity matrix whose bit patterns have an amount of bits that can be used to identify a location of the memory system from which data corresponding to the respective bit pattern is read.

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Treviglio, Italy

Paolo Amato