Micron Technology Incorporated

Paola Bacciaglia

Giulio Albini

Paolo Tessariol

Marcello Mariani

Umberto Maria Meotto

Methods of forming integrated circuit devices containing memory cells over a first region of a semiconductor substrate and gate structures over a second region of the semiconductor substrate recessed from the first region. The methods include forming a metal that is common to both the memory cells and the gate structures.

Methods of forming integrated circuit devices

Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.

Memory device and method of fabricating thereof

Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.

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Bellusco, Italy

Paola Bacciaglia