Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Paola Altieri-Weimar

Ingo Neudecker

Karl Weidner

Michael Zitzlsperger

Walter Wegleiter

Andreas Ploessl

Stefan Groetsch

Juergen Moosburger

Stefan Stegmeier

Christine Rafael

Marcus Zenger

Andreas Reith

Holger Klassen

André Steiner

A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

Semiconductor component with a stress compensation layer and a method for manufacturing a semiconductor component

The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.

Optoelectronic component and the connectivity thereof

A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Carrier and component with a buffer layer, and method for producing a component

A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.

Component having a buffer layer and method for producing a component

The invention relates to a device (), comprising at least one optoelectronic semiconductor component () and a substrate (), on which the semiconductor component is arranged, wherein an insulating layer () is adjacent to a lateral surface () that bounds the semiconductor component; a contact track () is arranged on a radiation passage surface of the semiconductor component and is connected to an electrically conductive manner to the semiconductor component; the contact track extends beyond the lateral surface of the semiconductor component and is arranged on the insulating layer; and the contact track is relieved with respect to a thermomechanical load occurring perpendicularly to the lateral surface.

Optoelectronic semiconductor device having contact track with relieved thermo-mechanical stress

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Wuppertal, Germany

Paola Altieri-Weimar