Epistar Corporation

United Epitaxy Company, Inc.

Mediatek Corporation

Pao-I Huang

Jen-Chau Wu

Chuan-Cheng Tu

Chung-Cheng Tu

Cheng-Chung Young

Shiu-Mu Tang

A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Method of making light emitting diode with irregular surface and independent valleys

Method of making light emitting diode

The invention provides a semiconductor light emitting device and the method of making it. The semiconductor light emitting device, according to the invention, includes an undoped InGAAlN film, as an Ohmic layer, formed between a top-most semiconductor material layer and a transparent conductive oxide layer. Since the undoped film as a tunneling layer is very thin (&#x2266;20 angstroms), the electric field across the tunneling layer, under forward bias, will make electron tunneling from valence band to conduction band, and return to the transparent conductive layer, A reasonably low and stable forward voltage of the semiconductor light emitting device according to the invention can be achieved.

Semiconductor light emitting device and method of making the same

A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.

High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof

A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.

Light emitting device

The present invention provides a quantum well device and a method of forming the same. The quantum well device comprises alternately stacked n layers of quantum well layers and n layers of barrier layers, wherein the quantum well layers and barrier layers are alternatively doped with dopant, and n is a positive integer. The dopant of a predetermined concentration is applied to control the breakdown voltage and output intensity of the quantum well device and to consequently avoid artificial and mechanical ESD failure.

Growing community of inventors

Chiayi, Taiwan

Pao-I Huang